CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
Van Hove, M., Boulay, S., Bahl, S. R., Stoffels, S., Xuanwu Kang, Wellekens, D., Geens, K., Delabie, A., Decoutere, S.
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)
Bahl, Sandeep R., Joh, Jungwoo, Yang, Fei
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
A Generalized Approach to Determine the Switching Lifetime of a GaN FET
Bahl, Sandeep R., Baltazar, Francisco, Xie, Yong
Published in 2020 IEEE International Reliability Physics Symposium (IRPS) (01.04.2020)
Published in 2020 IEEE International Reliability Physics Symposium (IRPS) (01.04.2020)
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Conference Proceeding
Overview of Wide/Ultrawide Bandgap Power Semiconductor Devices for Distributed Energy Resources
Mazumder, Sudip K., Voss, Lars F., Dowling, Karen M., Conway, Adam, Hall, David, Kaplar, Robert J., Pickrell, Gregory W., Flicker, Jack, Binder, Andrew T., Chowdhury, Srabanti, Veliadis, Victor, Luo, Fang, Khalil, Sameh, Aichinger, Thomas, Bahl, Sandeep R., Meneghini, Matteo, Charles, Alain B.
Published in IEEE journal of emerging and selected topics in power electronics (01.08.2023)
Published in IEEE journal of emerging and selected topics in power electronics (01.08.2023)
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Journal Article
New electrical overstress and energy loss mechanisms in GaN cascodes
Bahl, Sandeep R., Seeman, Michael D.
Published in 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2015)
Published in 2015 IEEE Applied Power Electronics Conference and Exposition (APEC) (01.03.2015)
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Conference Proceeding
Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs
Bulucea, Constantin, Bahl, Sandeep R, French, William D, Jeng-Jiun Yang, Francis, Pascale, Harjono, Tikno, Krishnamurthy, Vijay, Tao, Jon, Parker, Courtney
Published in IEEE transactions on electron devices (01.10.2010)
Published in IEEE transactions on electron devices (01.10.2010)
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Journal Article
A New Approach to Validate GaN FET Reliability to Power-Line Surges Under Use-Conditions
Bahl, Sandeep R., Brohlin, Paul
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
Published in 2019 IEEE International Reliability Physics Symposium (IRPS) (01.03.2019)
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Conference Proceeding
Product-level reliability of GaN devices
Bahl, Sandeep R., Ruiz, Daniel, Dong Seup Lee
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
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Conference Proceeding
Be diffusion in InGaAs/InP heterojunction bipolar transistors
Bahl, S.R., Moll, N., Robbins, V.M., Hao-Chung Kuo, Moser, B.G., Stillman, G.E.
Published in IEEE electron device letters (01.07.2000)
Published in IEEE electron device letters (01.07.2000)
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Journal Article
Reliability investigation of InGaP/GaAs heterojunction bipolar transistors
Bahl, S.R., Camnitz, L.H., Houng, D., Mierzwinski, M.
Published in IEEE electron device letters (01.09.1996)
Published in IEEE electron device letters (01.09.1996)
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Journal Article
STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES
BULUCEA CONSTANTIN, BAHL SANDEEP R, PARKER D. COURTNEY, ARCHER DONALD M, FRENCH WILLIAM D, YANG JENG JIUN (DECEASED)
Year of Publication 13.12.2011
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Year of Publication 13.12.2011
Patent
STRUCTURE AND FABRICATION OF ASYMMETRIC FIELD-EFFECT TRANSISTOR HAVING ASYMMETRIC CHANNEL ZONE AND DIFFERENTLY CONFIGURED SOURCE/DRAIN EXTENSIONS
BULUCEA CONSTANTIN, BAHL SANDEEP R, PARKER D. COURTNEY, ARCHER DONALD M, FRENCH WILLIAM D, JOHNSON PETER B, YANG JENG JIUN (DECEASED)
Year of Publication 10.01.2012
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Year of Publication 10.01.2012
Patent
Advantages of GaN in a high-voltage resonant LLC converter
Seeman, Michael D., Bahl, Sandeep R., Anderson, David I., Shah, Gaurang A.
Published in 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014 (01.03.2014)
Published in 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014 (01.03.2014)
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Conference Proceeding
Mesa-sidewall gate leakage in InAlAs/InGaAs heterostructure field-effect transistors
Bahl, S.R., Leary, M.H., del Alamo, J.A.
Published in IEEE transactions on electron devices (01.09.1992)
Published in IEEE transactions on electron devices (01.09.1992)
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Journal Article