GaN/AlGaN intersubband optoelectronic devices
Machhadani, H, Kandaswamy, P, Sakr, S, Vardi, A, Wirtmüller, A, Nevou, L, Guillot, F, Pozzovivo, G, Tchernycheva, M, Lupu, A, Vivien, L, Crozat, P, Warde, E, Bougerol, C, Schacham, S, Strasser, G, Bahir, G, Monroy, E, Julien, F H
Published in New journal of physics (17.12.2009)
Published in New journal of physics (17.12.2009)
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High performance horizontal gate-all-around silicon nanowire field-effect transistors
Shirak, O, Shtempluck, O, Kotchtakov, V, Bahir, G, Yaish, Y E
Published in Nanotechnology (05.10.2012)
Published in Nanotechnology (05.10.2012)
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Journal Article
Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility
Katz, O., Horn, A., Bahir, G., Salzman, J.
Published in IEEE transactions on electron devices (01.10.2003)
Published in IEEE transactions on electron devices (01.10.2003)
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Journal Article
Intersubband optics in GaN-based nanostructures - physics and applications
Tchernycheva, M., Nevou, L., Vivien, L., Julien, F. H., Kandaswamy, P. K., Monroy, E., Vardi, A., Bahir, G.
Published in Physica status solidi. B. Basic research (01.07.2010)
Published in Physica status solidi. B. Basic research (01.07.2010)
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Journal Article
Conference Proceeding
Stranski-Krastanov growth of GaN quantum dots on AlN template by metalorganic chemical vapor deposition
Zhang, J. C., Meyler, B., Vardi, A., Bahir, G., Salzman, J.
Published in Journal of applied physics (15.08.2008)
Published in Journal of applied physics (15.08.2008)
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Journal Article
On the extraction of linear and nonlinear physical parameters in nonideal diodes
Mikhelashvili, V., Eisenstein, G., Garber, V., Fainleib, S., Bahir, G., Ritter, D., Orenstein, M., Peer, A.
Published in Journal of applied physics (01.05.1999)
Published in Journal of applied physics (01.05.1999)
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Journal Article
Surface states and persistent photocurrent in a GaN heterostructure field effect transistor
Horn, A, Katz, O, Bahir, G, Salzman, J
Published in Semiconductor science and technology (01.07.2006)
Published in Semiconductor science and technology (01.07.2006)
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Journal Article
Photocurrent characterization of intraband transition in GaNVAIN quantum dots
Vardi, A, Bahir, G, Schacham, S E, Kandaswamy, P K, Monroy, E
Published in Journal of physics. Conference series (01.09.2010)
Published in Journal of physics. Conference series (01.09.2010)
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Journal Article
Engineering and impact of surface states on AlGaN/GaN-based hetero field effect transistors
Mistele, D, Katz, O, Horn, A, Bahir, G, Salzman, J
Published in Semiconductor science and technology (01.09.2005)
Published in Semiconductor science and technology (01.09.2005)
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Journal Article
Charge carrier mobility in field effect transistors: analysis of capacitance–conductance measurements
Katz, O, Roichman, Y, Bahir, G, Tessler, N, Salzman, J
Published in Semiconductor science and technology (01.01.2005)
Published in Semiconductor science and technology (01.01.2005)
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Journal Article
Characteristics of In $_x$ Al $_1-x$ N–GaN High-Electron Mobility Field-Effect Transistor
Katz, O., Mistele, D., Meyler, B., Bahir, G., Salzman, J.
Published in IEEE transactions on electron devices (01.02.2005)
Published in IEEE transactions on electron devices (01.02.2005)
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Journal Article
Investigation of laser beam-induced current techniques for heterojunction photodiode characterization
Redfern, D. A., Fang, W., Ito, K., Bahir, G., Musca, C. A., Dell, J. M., Faraone, L.
Published in Journal of applied physics (01.08.2005)
Published in Journal of applied physics (01.08.2005)
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Journal Article
Characteristics of In/sub x/Al/sub 1-x/N-GaN high-electron mobility field-effect transistor
Katz, O., Mistele, D., Meyler, B., Bahir, G., Salzman, J.
Published in IEEE transactions on electron devices (01.02.2005)
Published in IEEE transactions on electron devices (01.02.2005)
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Journal Article
Intraband photodetection at 1.3-1.5 μm in self-organized GaN/AlN quantum dots
DOYENNETTE, L, VARDI, A, GUILLOT, F, NEVOU, L, TCHERNYCHEVA, M, LUPU, A, COLOMBELLI, R, BAHIR, G, MONROY, E, JULIEN, F. H
Published in Physica status solidi. B. Basic research (01.12.2006)
Published in Physica status solidi. B. Basic research (01.12.2006)
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Conference Proceeding
Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes
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Conference Proceeding
Journal Article
Impact of native oxides beneath the gate contact of AlGaN/GaN HFET devices
Mistele, D., Katz, O., Horn, A., Bahir, G., Salzman, J.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
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Journal Article
Optical Spectroscopy of InGaN/GaN Quantum Wells
Berkowicz, E., Gershoni, D., Bahir, G., Abare, A.C., DenBaars, S.P., Coldren, L.A.
Published in physica status solidi (b) (01.11.1999)
Published in physica status solidi (b) (01.11.1999)
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