Growth, characterization and electrical properties of epitaxial erbium silicide
Arnaud d'Avitaya, F., Badoz, P.-A., Campidelli, Y., Chroboczek, J.A., Duboz, J.-Y., Perio, A., Pierre, J.
Published in Thin solid films (1990)
Published in Thin solid films (1990)
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Porous silicon: material properties, visible photo- and electroluminescence
Bomchil, G., Halimaoui, A., Sagnes, I., Badoz, P.A., Berbezier, I., Perret, P., Lambert, B., Vincent, G., Garchery, L., Regolini, J.L.
Published in Applied surface science (01.01.1993)
Published in Applied surface science (01.01.1993)
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Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure
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Electron mobility enhancement in a strained Si channel
Garchery, L., Sagnes, I., Warren, P., Dupuy, J.-C., Badoz, P.A.
Published in Journal of crystal growth (01.12.1995)
Published in Journal of crystal growth (01.12.1995)
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Si permeable-base transistor realization using a MOS-compatible technology
Letourneau, P., Vincent, G., Perret, P., Badoz, P.A., Rosencher, E.
Published in IEEE electron device letters (01.12.1989)
Published in IEEE electron device letters (01.12.1989)
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Infrared spectroscopy in p-type SiGe/Si quantum wells
Berroir, J.M., Zanier, S., Guldner, Y., Vieren, J.P., Sagnes, I., Campidelli, Y., Badoz, P.A.
Published in Applied surface science (01.08.1996)
Published in Applied surface science (01.08.1996)
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Photo-induced intersubband absorption in Si/SiGe quantum wells
BOUCAUD, P, GAO, L, VISOCEKAS, F, MOUSSA, Z, LOURTIOZE, J.-M, JULIEN, F.-H, SAGNES, I, CAMPIEDELLI, Y, BADOZ, P.-A, VAGOS, P
Published in Journal of crystal growth (02.12.1995)
Published in Journal of crystal growth (02.12.1995)
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Radiology of posterior lumbar apophyseal ring fractures: report of 13 cases
Dietemann, J L, Runge, M, Badoz, A, Dosch, J C, Beaujeux, R, Bonneville, J F, Wackenheim, A
Published in Neuroradiology (01.01.1988)
Published in Neuroradiology (01.01.1988)
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Charge transfer in p+-Si/Si1-xGex modulation doped heterostructures grown by RTCVD
WARREN, P, SAGNES, I, DUTARTRE, D, BADOZ, P. A, BERROIR, J. M, GULDNER, Y, VIEREN, J. P, VOOS, M
Published in Microelectronic engineering (01.08.1994)
Published in Microelectronic engineering (01.08.1994)
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Photoinduced infrared spectroscopy of bound-to-bound and bound-to-continuum transitions in SiGe/Si quantum wells
Boucaud, P., Wu, L., Moussa, Z., Julien, F.H., Lourtioz, J.-M., Sagnes, I., Campidelli, Y., Badoz, P.-A.
Published in Superlattices and microstructures (1996)
Published in Superlattices and microstructures (1996)
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Investigation of two-dimensional hole gases in Si/SiGe heterostructures
Guldner, Y, Berroir, JM, Vieren, JP, Voos, M, Sagnes, I, I, Badoz, PA, Warren, P, Dutartre, D
Published in Physical review. B, Condensed matter (15.10.1993)
Published in Physical review. B, Condensed matter (15.10.1993)
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Evidence for Fermi-energy pinning relative to either valence or conduction band in Schottky barriers
Duboz, JY, Badoz, PA, d'Avitaya, FA, Rosencher, E
Published in Physical review. B, Condensed matter (15.11.1989)
Published in Physical review. B, Condensed matter (15.11.1989)
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Photo-induced intersubband absorption in Si/Si1-xGex quantum wells
BOUCAUD, P, WU, L, JULIEN, F. H, LOURTIOZ, J.-M, SAGNES, I, CAMPIDELLI, Y, BADOZ, P.-A
Published in Applied surface science (01.08.1996)
Published in Applied surface science (01.08.1996)
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