Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy
Narayanan, V., Mahajan, S., Bachmann, K.J., Woods, V., Dietz, N.
Published in Acta materialia (02.04.2002)
Published in Acta materialia (02.04.2002)
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Journal Article
Relation between surface chemistry and solar cell performance of CuInSe2 single crystal electrodes
BACHMANN, K.J, MENEZES, S, KOETZ, R, FEARHEILY, M, LEWERENZ, H.J
Published in Surface science (01.03.1984)
Published in Surface science (01.03.1984)
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Journal Article
The current status of the preparation of single crystals, bicrystals, and epitaxial layers of p-InP and of polycrystalline p-InP films for photovoltaic applications
Bachmann, K.J., Buehler, E., Miller, B.I., McFee, J.H., Thiel, F.A.
Published in Journal of crystal growth (01.07.1977)
Published in Journal of crystal growth (01.07.1977)
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Journal Article
Kinetics of Epitaxial Growth
Bachmann, K.J., Cardelino, B.H., Moore, C.E.
Published in Encyclopedia of Materials: Science and Technology (2011)
Published in Encyclopedia of Materials: Science and Technology (2011)
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Book Chapter
Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001)
Dietz, N., Miller, A., Kelliher, J.T., Venables, D., Bachmann, K.J.
Published in Journal of crystal growth (1995)
Published in Journal of crystal growth (1995)
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Journal Article
Conference Proceeding
Real-time optical monitoring of GaxIn1-xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions
DIETZ, N, ROSSOW, U, ASPNES, D. E, BACHMANN, K. J
Published in Journal of crystal growth (01.07.1996)
Published in Journal of crystal growth (01.07.1996)
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Conference Proceeding
Journal Article
Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions
Dietz, N., Rossow, U., Aspnes, D.E., Bachmann, K.J.
Published in Applied surface science (01.08.1996)
Published in Applied surface science (01.08.1996)
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Journal Article
Conference Proceeding