Unipolar complementary bistable memories using gate-controlled negative differential resistance in a 2D-2D quantum tunneling transistor
Simmons, J.A., Blount, M.A., Moon, J.S., Baca, W.E., Reno, J.L., Hafich, M.J.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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