Imprint issue during retention tests for HfO2-based FRAM: An industrial challenge?
Bouaziz, J., Rojo Romeo, P., Baboux, N., Vilquin, B.
Published in Applied physics letters (22.02.2021)
Published in Applied physics letters (22.02.2021)
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Journal Article
Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers
Moalla, R., Cueff, S., Penuelas, J., Vilquin, B., Saint-Girons, G., Baboux, N., Bachelet, R.
Published in Scientific reports (12.03.2018)
Published in Scientific reports (12.03.2018)
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Journal Article
Pyroelectricity of Pb(Zr0.52Ti0.48)O3 films grown by sol–gel process on silicon
Moalla, R., Le Rhun, G., Defay, E., Baboux, N., Sebald, G., Bachelet, R.
Published in Thin solid films (01.02.2016)
Published in Thin solid films (01.02.2016)
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Journal Article
Pulsed laser deposition of epitaxial ferroelectric Pb(Zr,Ti)O3 films on silicon substrates
Borowiak, A.S., Niu, G., Pillard, V., Agnus, G., Lecoeur, Ph, Albertini, D., Baboux, N., Gautier, B., Vilquin, B.
Published in Thin solid films (01.05.2012)
Published in Thin solid films (01.05.2012)
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Journal Article
Conference Proceeding
Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
Liu, Q., Marconot, O., Piquemal, M., Eypert, C., Borowiak, A.S., Baboux, N., Gautier, B., Benamrouche, A., Rojo-Romeo, P., Robach, Y., Penuelas, J., Vilquin, B.
Published in Thin solid films (28.02.2014)
Published in Thin solid films (28.02.2014)
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Journal Article
Conference Proceeding
Interpretation of scanning capacitance microscopy for thin oxides characterization
Ligor, O., Gautier, B., Descamps-Mandine, A., Albertini, D., Baboux, N., Militaru, L.
Published in Thin solid films (30.10.2009)
Published in Thin solid films (30.10.2009)
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Journal Article
Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories
Bonafos, C, Benassayag, G, Cours, R, Pécassou, B, Guenery, P V, Baboux, N, Militaru, L, Souifi, A, Cossec, E, Hamga, K, Ecoffey, S, Drouin, D
Published in Materials research express (01.01.2018)
Published in Materials research express (01.01.2018)
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Journal Article
Growth temperature dependence of epitaxial Gd2O3 films on Si( 1 1 1 )
NIU, G, VILQUIN, B, BABOUX, N, PLOSSU, C, BECERRA, L, SAINT-GRIONS, G, HOLLINGER, G
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Journal Article
Perturbative phenomena affecting the quality of local measurements of electrical quantities at nanoscale
Gautier, B., Iazykov, M., Grandfond, A., Martin, S., Baboux, N., Militaru, L., Albertini, D.
Published in 29th Conference on Precision Electromagnetic Measurements (CPEM 2014) (01.08.2014)
Published in 29th Conference on Precision Electromagnetic Measurements (CPEM 2014) (01.08.2014)
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Conference Proceeding
Journal Article
Molecular beam deposition of LaAlO3 on silicon for sub-22 nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface
PELLOQUIN, S, BECERRA, L, SAINT-GIRONS, G, PLOSSU, C, BABOUX, N, ALBERTINI, D, GRENET, G, HOLLINGER, G
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Peculiarities of electron tunnel injection to the drain of EEPROMs
Baboux, N., Busseret, C., Plossu, C., Boivin, P.
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Journal Article
Conference Proceeding
A new technique to characterize endurance of EEPROM tunnel oxides
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Journal Article
Conference Proceeding
Impact of temperature on non-equilibrium Fowler-Nordheim EEPROM programming
Baboux, N., Plossu, C., Boivin, P., Mirabel, J.M.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Journal Article
Conference Proceeding
Dynamic Fowler–Nordheim injection in EEPROM tunnel oxides at realistic time scales
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Journal Article
Conference Proceeding
A new structure to monitor electrical transients during programming of EEPROM memory cells
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Journal Article
Conference Proceeding
Parameters extraction of hafnium based gate oxide capacitors
Nguyen, T., Busseret, C., Militaru, L., Poncet, A., Aimé, D., Baboux, N., Plossu, C.
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Journal Article
Conference Proceeding
A new dynamic gate capacitance measurement protocol to evaluate integrated high-voltage devices' switching loss performances in power management applications
Grelu, C., Baboux, N., Bianchi, R.A., Plossu, C.
Published in IEEE transactions on electron devices (01.12.2005)
Published in IEEE transactions on electron devices (01.12.2005)
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Journal Article
Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon
Fares, B., Gautier, B., Baboux, N., Prudon, G., Holliger, P., Dupuy, J.C.
Published in Applied surface science (15.06.2004)
Published in Applied surface science (15.06.2004)
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Journal Article
Quantitative study of charge trapping in SiO2 during bipolar Fowler-Nordheim injection
BUSSERET, C, BABOUX, N, PLOSSU, C, BURIGNAT, S, BOIVIN, P
Published in Journal of non-crystalline solids (15.07.2003)
Published in Journal of non-crystalline solids (15.07.2003)
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