Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities
Yurasov, D. V., Baídakova, N. A., Verbus, V. A., Gusev, N. S., Morozova, E. E., Shengurov, D. V., Yablonskiy, A. N., Novikov, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2021)
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Journal Article
Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals
Yablonskiy, A. N., Novikov, A. V., Stepikhova, M. V., Sergeev, S. M., Baidakova, N. A., Shaleev, M. V., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
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Journal Article
Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium
Yurasov, D. V., Baidakova, N. A., Drozdov, M. N., Morozova, E. E., Kalinnikov, M. A., Novikov, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
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Journal Article
Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics
Yurasov, D. V., Baidakova, N. A., Verbus, V. A., Gusev, N. S., Mashin, A. I., Morozova, E. E., Nezhdanov, A. V., Novikov, A. V., Skorohodov, E. V., Shengurov, D. V., Yablonskiy, A. N.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
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Journal Article
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Baidakova, N. A., Verbus, V. A., Morozova, E. E., Novikov, A. V., Skorohodov, E. V., Shaleev, M. V., Yurasov, D. V., Hombe, A., Kurokawa, Y., Usami, N.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2017)
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Journal Article
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics
Novikov, A. V., Yurasov, D. V., Morozova, E. E., Skorohodov, E. V., Verbus, V. A., Yablonskiy, A. N., Baidakova, N. A., Gusev, N. S., Kudryavtsev, K. E., Nezhdanov, A. V., Mashin, A. I.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2018)
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Journal Article
Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers
Yurasov, D V, Novikov, A V, Baidakova, N A, Morozova, E E, Yunin, P A, Shengurov, D V, Antonov, A V, Drozdov, M N, Krasilnik, Z F
Published in Semiconductor science and technology (01.12.2018)
Published in Semiconductor science and technology (01.12.2018)
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Journal Article
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates
Novikov, A. V., Yurasov, D. V., Baidakova, N. A., Bushuykin, P. A., Andreev, B. A., Yunin, P. A., Drozdov, M. N., Yablonskiy, A. N., Kalinnikov, M. A., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
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Journal Article
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
Prokhorov, D. S., Shengurov, V. G., Denisov, S. A., Filatov, D. O., Zdoroveishev, A. V., Chalkov, V. Yu, Zaitsev, A. V., Ved’, M. V., Dorokhin, M. V., Baidakova, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2019)
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Journal Article
Strained multilayer structures with pseudomorphic GeSiSn layers
Timofeev, V. A., Nikiforov, A. I., Tuktamyshev, A. R., Yesin, M. Yu, Mashanov, V. I., Gutakovskii, A. K., Baidakova, N. A.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
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Journal Article
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
Baidakova, N. A., Novikov, A. V., Shaleev, M. V., Yurasov, D. V., Morozova, E. E., Shengurov, D. V., Krasilnik, Z. F.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
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Journal Article
Fiber-optic temperature sensor based on low-coherence interferometry without scanning
Volkov, P.V., Goryunov, A.V., Luk’yanov, A.Yu, Tertyshnik, A.D., Baidakova, N.A., Luk’yanov, I.A.
Published in Optik (Stuttgart) (01.08.2013)
Published in Optik (Stuttgart) (01.08.2013)
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Journal Article
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge Substrates
Novikov, A. V, Yurasov, D. V, Baidakova, N. A, Bushuykin, P. A, Andreev, B. A, Yunin, P. A, Drozdov, M. N
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2019)
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Journal Article
Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon
Yurasov, D.V., Novikov, A.V., Shaleev, M.V., Baidakova, N.A., Morozova, E.E., Skorokhodov, E.V., Ota, Y., Hombe, A., Kurokawa, Y., Usami, N.
Published in Materials science in semiconductor processing (01.03.2018)
Published in Materials science in semiconductor processing (01.03.2018)
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Journal Article
Pulsed Ion-Beam Treatment of Germanium Implanted by Antimony Ions
Batalov, R. I., Bayazitov, R. M., Novikov, G. A., Shustov, V. A., Lyadov, N. M., Novikov, A. V., Bushuikin, P. A., Baidakova, N. A., Drozdov, M. N., Yunin, P. A.
Published in Optoelectronics, instrumentation, and data processing (01.09.2019)
Published in Optoelectronics, instrumentation, and data processing (01.09.2019)
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Journal Article