A 1.2 V 8 Gb 8-Channel 128 GB/s High-Bandwidth Memory (HBM) Stacked DRAM With Effective I/O Test Circuits
Lee, Dong Uk, Kim, Kyung Whan, Kim, Kwan Weon, Lee, Kang Seol, Byeon, Sang Jin, Kim, Jae Hwan, Cho, Jin Hee, Lee, Jaejin, Chun, Jun Hyun
Published in IEEE journal of solid-state circuits (01.01.2015)
Published in IEEE journal of solid-state circuits (01.01.2015)
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