In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
SINGISETTI, Uttam, WISTEY, Mark A, BO YU, YU YUAN, WANG, Dennis, TAUR, Yuan, ASBECK, Peter, LEE, Yong-Ju, BUREK, Gregory J, BARASKAR, Ashish K, THIBEAULT, Brian J, GOSSARD, Arthur C, RODWELL, Mark J. W, SHIN, Byungha, KIM, Eun J, MCINTYRE, Paul C
Published in IEEE electron device letters (01.11.2009)
Published in IEEE electron device letters (01.11.2009)
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Journal Article
InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
Singisetti, Uttam, Wistey, Mark A., Burek, Gregory J., Arkun, Erdem, Baraskar, Ashish K., Sun, Yanning, Kiewra, Edward W., Thibeault, Brian J., Gossard, Arthur C., Palmstrøm, Chris J., Rodwell, Mark J. W.
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth
Singisetti, U., Wistey, M.A., Burek, G.J., Baraskar, A.K., Cagnon, J., Thibeault, B., Gossard, A.C., Stemmer, S., Rodwell, M.J.W., Eunji Kim, Byungha Shin, McIntyre, P.C., Yong-Ju Lee
Published in 2009 IEEE International Conference on Indium Phosphide & Related Materials (01.05.2009)
Published in 2009 IEEE International Conference on Indium Phosphide & Related Materials (01.05.2009)
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