Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4-y, TMG and AsH3
BUCHAN, N. I, KUECH, T. F, SCILLA, G, CARDONE, F
Published in Journal of crystal growth (01.03.1991)
Published in Journal of crystal growth (01.03.1991)
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Journal Article
Decomposition mechanisms of trimethylgallium
Larsen, C.A., Buchan, N.I., Li, S.H., Stringfellow, G.B.
Published in Journal of crystal growth (01.04.1990)
Published in Journal of crystal growth (01.04.1990)
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Journal Article
Decomposition mechanisms of tertiarybutylarsine
Larsen, C.A., Buchan, N.I., Li, S.H., Stringfellow, G.B.
Published in Journal of crystal growth (01.03.1989)
Published in Journal of crystal growth (01.03.1989)
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Journal Article
A mass spectrometric study of the simultaneous reaction mechanism of TMIn and PH3 to grow InP
Buchan, N. I., Larsen, C. A., Stringfellow, G. B.
Published in Journal of crystal growth (01.10.1988)
Published in Journal of crystal growth (01.10.1988)
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Journal Article
Kinetics of the reaction between trimethylgallium and arsine
Larsen, C.A., Li, S.H., Buchan, N.I., Stringfellow, G.B., Brown, D.W.
Published in Journal of crystal growth (01.04.1990)
Published in Journal of crystal growth (01.04.1990)
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Journal Article
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
DE LYON, T. J, BUCHAN, N. I, KIRCHNER, P. D, WOODALL, J. M, MCINTURFF, D. T, SCILLA, G. J, CARDONE, F
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
Journal Article
Pyrolysis of tertiarybutylphosphine
LI, S. H, LARSEN, C. A, BUCHAN, N. I, STRINGFELLOW, G. B
Published in Journal of electronic materials (01.05.1989)
Published in Journal of electronic materials (01.05.1989)
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Journal Article
OMVPE growth mechanism for GaP using tertiarybutylphosphine and trimethylgallium
Li, S.H., Buchan, N.I., Larsen, C.A., Stringfellow, G.B.
Published in Journal of crystal growth (01.08.1989)
Published in Journal of crystal growth (01.08.1989)
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Journal Article
(Al)GaInP laser with lateral confinement by epitaxial growth on nonplanar substrates
Bona, G.-L., Unger, P., Buchan, N.I., Heuberger, W., Jakubowicz, A., Roentgen, P.
Published in IEEE photonics technology letters (01.10.1993)
Published in IEEE photonics technology letters (01.10.1993)
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Journal Article
Mechanisms of GaAs growth using tertiarybutylarsine and trimethylgallium
Larsen, C.A., Li, S.H., Buchan, N.I., Stringfellow, G.B.
Published in Journal of crystal growth (01.03.1989)
Published in Journal of crystal growth (01.03.1989)
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Journal Article
Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hotwall reactor
BUCHAN, N. I, KUECH, T. F, TISCHLER, M. A, SCILLA, G, CARDONE, F, POTEMSKI, R
Published in Journal of the Electrochemical Society (01.09.1991)
Published in Journal of the Electrochemical Society (01.09.1991)
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Journal Article
Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
Buchan, N. I., Kuech, T. F., Scilla, G., Cardone, F., Potemski, R.
Published in Journal of electronic materials (01.03.1990)
Published in Journal of electronic materials (01.03.1990)
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Journal Article
Carbon incorporation in metal-organic vapor phase epitaxy grown GaAs from CHxI4-x, HI, and I2
BUCHAN, N. I, KUECH, T. F, SCILLA, G, CARDONE, F, POTEMSKI, R
Published in Journal of electronic materials (01.03.1990)
Published in Journal of electronic materials (01.03.1990)
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Journal Article
GaAs growth using tertiarybutylarsine and trimethylgallium
Larsen, C.A., Buchan, N.I., Li, S.H., Stringfellow, G.B.
Published in Journal of crystal growth (1988)
Published in Journal of crystal growth (1988)
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Journal Article