Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning
Chen, Xinyu, Xie, Yufeng, Sheng, Yaochen, Tang, Hongwei, Wang, Zeming, Wang, Yu, Wang, Yin, Liao, Fuyou, Ma, Jingyi, Guo, Xiaojiao, Tong, Ling, Liu, Hanqi, Liu, Hao, Wu, Tianxiang, Cao, Jiaxin, Bu, Sitong, Shen, Hui, Bai, Fuyu, Huang, Daming, Deng, Jianan, Riaud, Antoine, Xu, Zihan, Wu, Chenjian, Xing, Shiwei, Lu, Ye, Ma, Shunli, Sun, Zhengzong, Xue, Zhongyin, Di, Zengfeng, Gong, Xiao, Zhang, David Wei, Zhou, Peng, Wan, Jing, Bao, Wenzhong
Published in Nature communications (12.10.2021)
Published in Nature communications (12.10.2021)
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Journal Article
Surface effect on the current-voltage characteristics of back-gated MoS2 channel MOSFET
Mingyue He, Sitong Bu, Daming Huang
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
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Conference Proceeding
Low frequency noise characteristics in p-Type MOSFET with multilayer WSe2 channel and Al2O3 back gate dielectric
Hui Shen, Huiwen Yuan, Sitong Bu, Mingyue He, Daming Huang
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
Published in 2017 IEEE 12th International Conference on ASIC (ASICON) (01.10.2017)
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Conference Proceeding
The efficient framework and algorithm for provisioning evolving VDC in federated data centers
Sun, Gang, Liao, Dan, Bu, Sitong, Yu, Hongfang, Sun, Zhili, Chang, Victor
Published in Future generation computer systems (01.08.2017)
Published in Future generation computer systems (01.08.2017)
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Journal Article
Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect
Sheng, Yaochen, Chen, Xinyu, Liao, Fuyou, Wang, Yin, Ma, Jingyi, Deng, Jianan, Guo, Zhongxun, Bu, Sitong, Shen, Hui, Bai, Fuyu, Huang, Daming, Wang, Jianlu, Hu, Weida, Chen, Lin, Zhu, Hao, Sun, Qingqing, Zhou, Peng, Zhang, David Wei, Wan, Jing, Bao, Wenzhong
Published in Advanced electronic materials (01.07.2021)
Published in Advanced electronic materials (01.07.2021)
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Journal Article
Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect
Sheng, Yaochen, Chen, Xinyu, Liao, Fuyou, Wang, Yin, Ma, Jingyi, Deng, Jianan, Guo, Zhongxun, Bu, Sitong, Shen, Hui, Bai, Fuyu, Huang, Daming, Wang, Jianlu, Hu, Weida, Chen, Lin, Zhu, Hao, Sun, Qingqing, Zhou, Peng, Zhang, David Wei, Wan, Jing, Bao, Wenzhong
Published in Advanced electronic materials (01.07.2021)
Published in Advanced electronic materials (01.07.2021)
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Journal Article
FERROELECTRIC MEMORY AND STORAGE DEVICE
Bu, Sitong, XU, JEFFREY JUNHAO, Hou, Zhaozhao, Zhang, Yu, Fang, Yichen
Year of Publication 18.04.2024
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Year of Publication 18.04.2024
Patent
FERROELECTRIC MEMORY AND STORAGE DEVICE
HOU, Zhaozhao, ZHANG, Yu, FANG, Yichen, XU, Jeffrey Junhao, BU, Sitong
Year of Publication 06.03.2024
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Year of Publication 06.03.2024
Patent
FERROELECTRIC MEMORY AND STORAGE DEVICE
HOU, Zhaozhao, ZHANG, Yu, FANG, Yichen, XU, Jeffrey Junhao, BU, Sitong
Year of Publication 25.10.2023
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Year of Publication 25.10.2023
Patent
FERROELECTRIC MEMORY AND STORAGE DEVICE
HOU, Zhaozhao, ZHANG, Yu, WU, Ying, JING, Weiliang, TAN, Wanliang, XU, Jeffrey Junhao, FANG, Yichen, BU, Sitong, ZHANG, Heng
Year of Publication 22.11.2023
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Year of Publication 22.11.2023
Patent
FERROELECTRIC MEMORY AND STORAGE DEVICE
HOU, Zhaozhao, ZHANG, Yu, WU, Ying, JING, Weiliang, TAN, Wanliang, XU, Jeffrey Junhao, FANG, Yichen, BU, Sitong, ZHANG, Heng
Year of Publication 31.08.2023
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Year of Publication 31.08.2023
Patent
FERROELECTRIC MEMORY AND STORAGE DEVICE
HOU, Zhaozhao, ZHANG, Yu, WU, Ying, JING, Weiliang, TAN, Wanliang, XU, Jeffrey Junhao, FANG, Yichen, BU, Sitong, ZHANG, Heng
Year of Publication 16.08.2023
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Year of Publication 16.08.2023
Patent