Semiconductor laser having a layer structure and process for producing the same
EICHLER, CHRISTOPH, GERHARD, SVEN, AVRAMESCU, ADRIAN STEFAN, LERMER, TERESA, BRUEDERL, GEORG, STRAUSS, UWE
Year of Publication 11.11.2015
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Year of Publication 11.11.2015
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Optoelectronic semiconductor chip for radiation production or radiation detection has a superlattice made from a periodic sequence of thin layers of mixed crystal compositions formed in active or delimiting layers
FEHRER, MICHAEL, BAUR, JOHANNES, HAHN, BERTHOLD, STATH, NORBERT, BRUEDERL, GEORG
Year of Publication 01.04.2004
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Year of Publication 01.04.2004
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Semiconductor laser with improved current conduction
EICHLER, CHRISTOPH, GERHARD, SVEN, AVRAMESCU, ADRIAN STEFAN, LERMER, TERESA, BRUEDERL, GEORG, STRAUSS, UWE
Year of Publication 01.05.2014
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Year of Publication 01.05.2014
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ALGALNN SEMICONDUCTOR LASER WITH A MESA AND WITH IMPROVED CURRENT CONDUCTION
EICHLER, CHRISTOPH, GERHARD, SVEN, AVRAMESCU, ADRIAN STEFAN, WURM, TERESA, BRUEDERL, GEORG, STRAUSS, UWE
Year of Publication 03.04.2014
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Year of Publication 03.04.2014
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INGAN-BASED LIGHT-EMITTING DIODE CHIP AND A METHOD FOR THE PRODUCTION THEREOF
BAUR, JOHANNES, HAHN, BERTHOLD, HAERLE, VOLKER, BRUEDERL, GEORG, STRAUSS, UWE
Year of Publication 09.04.2003
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Year of Publication 09.04.2003
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Light-emitting-diode-chip on the basis of InGaN and its method of manufacturing
BAUR, JOHANNES, HAHN, BERTHOLD, HAERLE, VOLKER, BRUEDERL, GEORG, STRAUSS, UWE
Year of Publication 21.01.2003
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Year of Publication 21.01.2003
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Contact metallization used in production of semiconductors contains copper distributed in partial volume
LELL, ALFRED, WEIMAR, ANDREAS, HAERLE, VOLKER, ARNOLD, CLAUDIA, BRUEDERL, GEORG
Year of Publication 13.06.2002
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Year of Publication 13.06.2002
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Ohmic contact structure and method for the production of the same
STRAUSS UWE, BRUEDERL GEORG, LUGAUER HANS-JUERGEN, HAERLE VOLKER, WEIMAR ANDREAS, HAHN BERTHOLD
Year of Publication 23.02.2005
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Year of Publication 23.02.2005
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Production of a radiation-emitting semiconductor component used as a light emitting diode comprises applying a first reflector layer on a substrate, applying a semiconductor layer sequence, and applying a second reflector layer
BAUR, JOHANNES, LELL, ALFRED, LUGAUER, HANS-JUERGEN, KAISER, STEPHAN, EISERT, DOMINIK, STRAUS, UWE, BRUEDERL, GEORG
Year of Publication 01.04.2004
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Year of Publication 01.04.2004
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Radiation-emitting semiconductor component used in a laser comprises a radiation-decoupling layer, a series of semiconductor layers containing a photon-emitting active layer, and two reflecting layers forming a resonator
BAUR, JOHANNES, LELL, ALFRED, LUGAUER, HANS-JUERGEN, KAISER, STEPHAN, EISERT, DOMINIK, BRUEDERL, GEORG, STRAUSS, UWE
Year of Publication 11.09.2003
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Year of Publication 11.09.2003
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Composite substrate, and method for the production of a composite substrate
STRAUSS UWE, BRUEDERL GEORG, EICHLER CHRISTOPH, HAERLE VOLKER, AVRAMESCU ADRIAN
Year of Publication 06.05.2009
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Year of Publication 06.05.2009
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Ohmic contact structure and method for the production of the same
STRAUSS UWE, BRUEDERL GEORG, HAERLE VOLKER, WEIMAR ANDREAS, HAHN BERTHOLD
Year of Publication 09.04.2008
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Year of Publication 09.04.2008
Patent
Optoelektronischer Halbleiterchip
HOEPPEL, LUTZ, STRASBURG, MARTIN, ALBRECHT, TONY, HAERLE, VOLKER, BRUEDERL, GEORG
Year of Publication 27.03.2008
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Year of Publication 27.03.2008
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