Effect of annealing temperatures and of high content of the iron ion (Fe3+)-doping on transition anatase–rutile phase of nanocrystalline TiO2 thin films prepared by sol–gel spin coating
Bennaceur, J., Mechiakh, R., Bousbih, F., Jaouadi, M., Chtourou, R.
Published in Journal of sol-gel science and technology (2012)
Published in Journal of sol-gel science and technology (2012)
Get full text
Journal Article
Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x ≈ 10%) saturable absorber quantum wells
BEN BOUZID, S, ZAGHDOUDI, W, HAMDOUNI, A, BEN SEDRINE, N, BOUSBIH, F, HARMAND, J. C, CHTOUROU, R
Published in Applied surface science (15.09.2008)
Published in Applied surface science (15.09.2008)
Get full text
Journal Article
Band gap energy, nitrogen localized states and GaN-like phonon in heavily doped GaAsN grown by molecular beam epitaxy
BEN BOUZID, S, BOUSBIH, F, CHTOUROU, R, TOUNIE, E
Published in Solid state communications (01.04.2004)
Published in Solid state communications (01.04.2004)
Get full text
Journal Article
Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy
Ben Bouzid, S., Bousbih, F., Chtourou, R., Harmand, J.C., Voisin, P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.09.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.09.2004)
Get full text
Journal Article
Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1−xNx layers
Bousbih, F., Bouzid, S.B., Hamdouni, A., Chtourou, R., Harmand, J.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.11.2005)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (25.11.2005)
Get full text
Journal Article
Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1−xNx structures
Hamdouni, A., Bousbih, F., Ben Bouzid, S., Oueslati, M., Chtourou, R., Harmand, J.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (20.11.2005)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (20.11.2005)
Get full text
Journal Article
Observation of localization complexes and phonons replicas in heavily doped GaAs1−xNx
Bousbih, F., Ben Bouzid, S., Chtourou, R., Harmand, J.C.
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
Get full text
Journal Article
Conference Proceeding
Photoluminescence study of the nitrogen content effect on GaAs/GaAs1−xNx/GaAs/AlGaAs: (Si) quantum well
Hamdouni, A., Bousbih, F., Ben bouzid, S., Aloulou, S., Harmand, J.C., Chtourou, R.
Published in Materials Science and Engineering C: Biomimetic Materials, Sensors and Systems (01.07.2008)
Published in Materials Science and Engineering C: Biomimetic Materials, Sensors and Systems (01.07.2008)
Get full text
Journal Article
Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds
Bousbih, F, Bouzid, S.Ben, Chtourou, R, Charfi, F.F, Harmand, J.C, Ungaro, G
Published in Materials Science & Engineering C (01.09.2002)
Published in Materials Science & Engineering C (01.09.2002)
Get full text
Journal Article
Optical properties of GaInNAsSb/GaAs/GaAs 1− x N x ( x ≈ 10%) saturable absorber quantum wells
Ben Bouzid, S., Zaghdoudi, W., Hamdouni, A., Ben Sedrine, N., Bousbih, F., Harmand, J.C., Chtourou, R.
Published in Applied surface science (15.09.2008)
Published in Applied surface science (15.09.2008)
Get full text
Journal Article
Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs 1 − x N x layers
Bousbih, F., Bouzid, S.B., Hamdouni, A., Chtourou, R., Harmand, J.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2005)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2005)
Get full text
Journal Article