Current-limiting challenges for all-spin logic devices
Su, Li, Zhang, Youguang, Klein, Jacques-Olivier, Zhang, Yue, Bournel, Arnaud, Fert, Albert, Zhao, Weisheng
Published in Scientific reports (09.10.2015)
Published in Scientific reports (09.10.2015)
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Journal Article
Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node
Raine, M, Hubert, G, Gaillardin, M, Artola, L, Paillet, P, Girard, S, Sauvestre, J-E, Bournel, A
Published in IEEE transactions on nuclear science (01.06.2011)
Published in IEEE transactions on nuclear science (01.06.2011)
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Journal Article
Monte Carlo analysis of the dynamic behavior of III–V MOSFETs for low-noise RF applications
Shi, Ming, Saint-Martin, Jérôme, Bournel, Arnaud, Querlioz, Damien, Wichmann, Nicolas, Bollaert, Sylvain, Danneville, François, Dollfus, Philippe
Published in Solid-state electronics (01.09.2013)
Published in Solid-state electronics (01.09.2013)
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Journal Article
Numerical simulation of III–V FET architectures for high frequency and low consumption applications
Shi, Ming, Saint-Martin, Jérôme, Bournel, Arnaud, Dollfus, Philippe
Published in Microelectronic engineering (01.04.2011)
Published in Microelectronic engineering (01.04.2011)
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Journal Article
Conference Proceeding
Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport
Querlioz, Damien, Nguyen, Huu-Nha, Saint-Martin, Jérôme, Bournel, Arnaud, Galdin-Retailleau, Sylvie, Dollfus, Philippe
Published in Journal of computational electronics (01.10.2009)
Published in Journal of computational electronics (01.10.2009)
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Journal Article
An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs
Querlioz, Damien, Dollfus, Philippe, Do, Van-Nam, Bournel, Arnaud, Nguyen, Van Lien
Published in Journal of computational electronics (01.12.2006)
Published in Journal of computational electronics (01.12.2006)
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Journal Article
Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
Hung Nguyen, Viet, Saint-Martin, Jérôme, Querlioz, Damien, Mazzamuto, Fulvio, Bournel, Arnaud, Niquet, Yann-Michel, Dollfus, Philippe
Published in Journal of computational electronics (01.06.2013)
Published in Journal of computational electronics (01.06.2013)
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Journal Article
Large Tunneling Magnetoresistance in VSe 2 /MoS 2 Magnetic Tunnel Junction
Zhou, Jiaqi, Qiao, Junfeng, Duan, Chun-Gang, Bournel, Arnaud, Wang, Kang L, Zhao, Weisheng
Published in ACS applied materials & interfaces (15.05.2019)
Published in ACS applied materials & interfaces (15.05.2019)
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Journal Article
Large Tunneling Magnetoresistance in VSe2/MoS2 Magnetic Tunnel Junction
Zhou, Jiaqi, Qiao, Junfeng, Duan, Chun-Gang, Bournel, Arnaud, Wang, Kang L, Zhao, Weisheng
Published in ACS applied materials & interfaces (15.05.2019)
Published in ACS applied materials & interfaces (15.05.2019)
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Journal Article
TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic
Lomonaco, J., Rostand, N., Martinie, S., Bournel, A.
Published in Solid-state electronics (01.01.2024)
Published in Solid-state electronics (01.01.2024)
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Journal Article
Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions
Yang, Wei, Cao, Yuan, Han, Jiangchao, Lin, Xiaoyang, Wang, Xinhe, Wei, Guodong, Lv, Chen, Bournel, Arnaud, Zhao, Weisheng
Published in Nanoscale (14.01.2021)
Published in Nanoscale (14.01.2021)
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Journal Article
Ultra-Fast True Random Number Generator Based on Ill-Posedness Nucleation of Skyrmion Bags in Ferrimagnets
Zhang, Zhizhong, Lin, Kelian, Zhang, Kun, Feng, Xueqiang, Chen, Lei, Zhang, Youguang, Bournel, Arnaud, Klaui, Mathias, Zhao, Weisheng, Zhang, Yue
Published in IEEE electron device letters (01.05.2024)
Published in IEEE electron device letters (01.05.2024)
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Journal Article
Magnon scattering modulated by omnidirectional hopfion motion in antiferromagnets for meta-learning
Zhang, Zhizhong, Lin, Kelian, Zhang, Yue, Bournel, Arnaud, Xia, Ke, Kläui, Mathias, Zhao, Weisheng
Published in Science advances (10.02.2023)
Published in Science advances (10.02.2023)
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Journal Article
3D Ferrimagnetic Device for Multi-Bit Storage and Efficient In-Memory Computing
Zhang, Zhizhong, Zheng, Zhenyi, Zhang, Yue, Sun, Jinyi, Lin, Kelian, Zhang, Kun, Feng, Xueqiang, Chen, Lei, Wang, Jinkai, Wang, Guanda, Du, Yinchang, Zhang, Youguang, Bournel, Arnaud, Amiri, Pedram Khalili, Zhao, Weisheng
Published in IEEE electron device letters (01.02.2021)
Published in IEEE electron device letters (01.02.2021)
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Journal Article
Educational project on the design of a demonstrator with automatic pressure measurement
Zhang, Ming, Bournel, Arnaud, Raimbault, Jean-Luc, Llaser, Nicolas, Louis, Nicolas, Malatchoumy, Josue, Gruat, Daniel
Published in 2022 IEEE International Symposium on Circuits and Systems (ISCAS) (28.05.2022)
Published in 2022 IEEE International Symposium on Circuits and Systems (ISCAS) (28.05.2022)
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Conference Proceeding
Educational project on the design of interface circuit for a Pirani pressure sensor
Ming Zhang, Bournel, Arnaud, Llaser, Nicolas
Published in 2018 IEEE International Symposium on Circuits and Systems (ISCAS) (27.05.2018)
Published in 2018 IEEE International Symposium on Circuits and Systems (ISCAS) (27.05.2018)
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Conference Proceeding
High Tunnel Magnetoresistance in Mo/CoFe/MgO Magnetic Tunnel Junction: A First-Principles Study
Jiaqi Zhou, Weisheng Zhao, Shouzhong Peng, Junfeng Qiao, Klein, Jacques-Olivier, Xiaoyang Lin, Youguang Zhang, Bournel, Arnaud
Published in IEEE transactions on magnetics (01.11.2017)
Published in IEEE transactions on magnetics (01.11.2017)
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Journal Article