Designing III-V multijunction solar cells on silicon
Connolly, James P., Mencaraglia, Denis, Renard, Charles, Bouchier, Daniel
Published in Progress in photovoltaics (01.07.2014)
Published in Progress in photovoltaics (01.07.2014)
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Conference Proceeding
Novel Heterostructured Ge Nanowires Based on Polytype Transformation
Vincent, Laetitia, Patriarche, Gilles, Hallais, Géraldine, Renard, Charles, Gardès, Cyrille, Troadec, David, Bouchier, Daniel
Published in Nano letters (13.08.2014)
Published in Nano letters (13.08.2014)
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Journal Article
Atypical reversed pressure-induced phase transformation in Ge nanowires
Djomani, Doriane, Capitani, Francesco, Brubach, Jean Blaise, Calandrini, Eugenio, Renard, Charles, Bouchier, Daniel, Itié, Jean Paul, Roy, Pascale, Vincent, Laetitia
Published in Nanotechnology (20.03.2020)
Published in Nanotechnology (20.03.2020)
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Annealing effect on mechanical stress in reactive ion-beam sputter-deposited silicon nitride films
FOURRIER, A, BOSSEBOEUF, A, BOUCHIER, D, GAUTHERIN, G
Published in Japanese Journal of Applied Physics (01.07.1991)
Published in Japanese Journal of Applied Physics (01.07.1991)
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Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding
Coste, Marie, Molière, Timothée, Cherkashin, Nikolay, Hallais, Géraldine, Vincent, Laëtitia, Bouchier, Daniel, Renard, Charles
Published in Thin solid films (01.02.2018)
Published in Thin solid films (01.02.2018)
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Journal Article
High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
Renard, Charles, Molière, Timothée, Cherkashin, Nikolay, Alvarez, José, Vincent, Laetitia, Jaffré, Alexandre, Hallais, Géraldine, Connolly, James Patrick, Mencaraglia, Denis, Bouchier, Daniel
Published in Scientific reports (04.05.2016)
Published in Scientific reports (04.05.2016)
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Journal Article
Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H
Vincent, Laetitia, Fadaly, Elham M. T., Renard, Charles, Peeters, Wouter H. J., Vettori, Marco, Panciera, Federico, Bouchier, Daniel, Bakkers, Erik P. A. M, Verheijen, Marcel A.
Published in Advanced materials interfaces (01.06.2022)
Published in Advanced materials interfaces (01.06.2022)
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Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
Renard, Charles, Molière, Timothée, Cherkashin, Nikolay, Alvarez, José, Vincent, Laetitia, Jaffré, Alexandre, Hallais, Géraldine, Connolly, James Patrick, Mencaraglia, Denis, Bouchier, Daniel
Published in Scientific reports (22.09.2016)
Published in Scientific reports (22.09.2016)
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GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium
Molière, T., Jaffré, A., Alvarez, J., Mencaraglia, D., Connolly, J. P., Vincent, L., Hallais, G., Mangelinck, D., Descoins, M., Bouchier, D., Renard, C.
Published in Journal of applied physics (21.01.2017)
Published in Journal of applied physics (21.01.2017)
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Journal Article
Faceting mechanisms of Si nanowires and gold spreading
Vincent, Laetitia, Boukhicha, Rym, Gardès, Cyrille, Renard, Charles, Yam, Vy, Fossard, Frédéric, Patriarche, Gilles, Bouchier, Daniel
Published in Journal of materials science (01.02.2012)
Published in Journal of materials science (01.02.2012)
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Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2
Renard, C., Cherkashin, N., Jaffre, A., Molière, T., Hallais, G., Vincent, L., Alvarez, J., Mencaraglia, D., Michel, A., Bouchier, D.
Published in Journal of crystal growth (01.09.2014)
Published in Journal of crystal growth (01.09.2014)
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Conference Proceeding
Growth-related formation mechanism of I$_3$-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Vincent, Laetitia, Fadaly, Elham M. T, Renard, Charles, Peeters, Wouter H. J, Vettori, Marco, Panciera, Federico, Bouchier, Daniel, Bakkers, Erik PA. M, Verheijen, Marcel A
Year of Publication 06.01.2022
Year of Publication 06.01.2022
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Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism
CALMES, Cyril, BOUCHIER, Daniel, CLERC, Catherine, YULIN ZHENG
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Conference Proceeding
Journal Article
Selective Epitaxial Growth Of Si And Relaxed Ge By UHV-CVD In Si(001) Windows
Fossard, Frédéric, Halbwax, Mathieu, Yam, Vy, Nguyen, Huu Lam, Mathet, Véronique, Cammilleri, Davide, Débarre, Dominique, Boulmer, Jacques, Bouchier, Daniel
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Multilayer photoreceptor device, layers of which have different lattice parameters
BOUCHIER, Daniel, CONNOLY, James, MOLIERE, Thimothée, MENCARAGLIA, Denis, RENARD, Charles
Year of Publication 18.04.2019
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Year of Publication 18.04.2019
Patent
MULTILAYER PHOTORECEPTOR DEVICE, LAYERS OF WHICH HAVE DIFFERENT LATTICE PARAMETERS
BOUCHIER, Daniel, MOLIERE, Thimothée, MENCARAGLIA, Denis, RENARD, Charles, CONNOLLY, James
Year of Publication 27.02.2019
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Year of Publication 27.02.2019
Patent