Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
Cordier, Yvon, Natali, Franck, Chmielowska, Magdalena, Leroux, Mathieu, Chaix, Catherine, Bouchaib, Pierre
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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