Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications
Chevalier, Pascal, Jungemann, C., Lovblom, Rickard, Maneux, Cristell, Ostinelli, Olivier, Pawlak, Andreas, Rinaldi, Niccolo, Rucker, Holger, Wedel, Gerald, Zimmer, Thomas, Schroter, Michael, Bolognesi, Colombo R., d'Alessandro, Vincenzo, Alexandrova, Maria, Bock, Josef, Flickiger, Ralf, Fregonese, Sebastien, Heinemann, Bernd
Published in Proceedings of the IEEE (01.06.2017)
Published in Proceedings of the IEEE (01.06.2017)
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Journal Article
Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs)
Bolognesi, Colombo R, Quan, Wei, Arabhavi, Akshay M, Saranovac, Tamara, Flückiger, Ralf, Ostinelli, Olivier, Wen, Xin, Luisier, Mathieu
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications
Chaudhary, Rimjhim, Arabhavi, Akshay M., Kulmer, Laurenz, Hamzeloui, Sara, Leich, Martin, Ostinelli, Olivier, Leuthold, Juerg, Bolognesi, Colombo R.
Published in Journal of lightwave technology (15.04.2024)
Published in Journal of lightwave technology (15.04.2024)
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Journal Article
High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec-Part I: Material and Device Characterization, DC Performance, and Simulation
Han, Daxin, Bonomo, Giorgio, Ruiz, Diego Calvo, Arabhavi, Akshay Mahadev, Ostinelli, Olivier J. S., Bolognesi, Colombo R.
Published in IEEE transactions on electron devices (01.07.2022)
Published in IEEE transactions on electron devices (01.07.2022)
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Journal Article
Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance
Calvo Ruiz, Diego, Han, Daxin, Bonomo, Giorgio, Saranovac, Tamara, Ostinelli, Olivier, Bolognesi, Colombo R.
Published in Physica status solidi. A, Applications and materials science (01.02.2021)
Published in Physica status solidi. A, Applications and materials science (01.02.2021)
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Journal Article
High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec-Part II: Dynamic Switching and RF Performance
Han, Daxin, Bonomo, Giorgio, Ruiz, Diego Calvo, Arabhavi, Akshay Mahadev, Ostinelli, Olivier J. S., Bolognesi, Colombo R.
Published in IEEE transactions on electron devices (01.07.2022)
Published in IEEE transactions on electron devices (01.07.2022)
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Journal Article
InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz
Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.
Published in IEEE transactions on electron devices (01.04.2022)
Published in IEEE transactions on electron devices (01.04.2022)
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Journal Article
Design of On-Wafer TRL Calibration Kit for InP Technologies Characterization up to 500 GHz
Deng, Marina, Mukherjee, Chhandak, Yadav, Chandan, Fregonese, Sebastien, Zimmer, Thomas, De Matos, Magali, Quan, Wei, Arabhavi, Akshay Mahadev, Bolognesi, Colombo R., Wen, Xin, Luisier, Mathieu, Raya, Christian, Ardouin, Bertrand, Maneux, Cristell
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Scalable Compact Modeling of III-V DHBTs: Prospective Figures of Merit Toward Terahertz Operation
Mukherjee, Chhandak, Raya, Christian, Ardouin, Bertrand, Deng, Marina, Fregonese, Sebastien, Zimmer, Thomas, Nodjiadjim, Virginie, Riet, Muriel, Dupuy, Jean-Yves, Luisier, Mathieu, Quan, Wei, Arabhavi, Akshay, Bolognesi, Colombo R., Maneux, Cristell
Published in IEEE transactions on electron devices (01.12.2018)
Published in IEEE transactions on electron devices (01.12.2018)
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Journal Article
Record 35% Power-Added Efficiency at 170 GHz in 300-nm InP/GaAsSb DHBTs
Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Bonomo, Giorgio, Ebrahimi, Mojtaba, Chaudhary, Rimjhim, Muller, Markus, Ostinelli, Olivier, Schroter, Michael, Bolognesi, Colombo R.
Published in IEEE microwave and wireless technology letters (Print) (01.08.2024)
Published in IEEE microwave and wireless technology letters (Print) (01.08.2024)
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Journal Article
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With } ~ 0.53 THz
Weimann, Nils G., Johansen, Tom K., Stoppel, Dimitri, Matalla, Matthias, Brahem, Mohamed, Nosaeva, Ksenia, Boppel, Sebastian, Volkmer, Nicole, Ostermay, Ina, Krozer, Viktor, Ostinelli, Olivier, Bolognesi, Colombo R.
Published in IEEE transactions on electron devices (01.09.2018)
Published in IEEE transactions on electron devices (01.09.2018)
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Journal Article
A W -Band On-Wafer Active Load-Pull System Based on Down-Conversion Techniques
Teppati, Valeria, Benedickter, Hansruedi, Marti, Diego, Garelli, Marco, Tirelli, Stefano, Lovblom, Rickard, Fluckiger, Ralf, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, Colombo R.
Published in IEEE transactions on microwave theory and techniques (01.01.2014)
Published in IEEE transactions on microwave theory and techniques (01.01.2014)
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Journal Article
High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density At 94 GHz
Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Fluckiger, Ralf, Marti, Diego, Ebrahimi, Mojtaba, Ostinelli, Olivier, Bolognesi, Colombo R.
Published in IEEE journal of microwaves (2022)
Published in IEEE journal of microwaves (2022)
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Journal Article
Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors
Bolognesi, Colombo R., Dvorak, Martin W., Matine, Noureddine, Pitts, Oliver J., Watkins, Simon P.
Published in Japanese Journal of Applied Physics (01.02.2002)
Published in Japanese Journal of Applied Physics (01.02.2002)
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Journal Article
AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz
Tirelli, Stefano, Marti, Diego, Lugani, Lorenzo, Carlin, Jean-Fran\{c}ois, Grandjean, Nicolas, Bolognesi, Colombo R
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
G-Band Load-Pull Characterization of High-Efficiency Emitter-Fin InP/GaAsSb DHBTs
Ciabattini, Filippo, Hamzeloui, Sara, Arabhavi, Akshay M., Ebrahimi, Mojtaba, Ostinelli, Olivier, Bolognesi, Colombo R.
Published in 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM) (20.05.2024)
Published in 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM) (20.05.2024)
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Conference Proceeding
InP/GaInP Composite-Collector for Improved Breakdown Voltage in the InP/GaAsSb DHBTs
Arabhavi, Akshay M., Hamzeloui, Sara, Quan, Wei, Ciabattini, Filippo, Ostinelli, Olivier, Bolognesi, Colombo R.
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
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Conference Proceeding
Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz
Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Ebrahimi, Mojtaba, Muller, Markus, Ostinelli, Olivier, Schroter, Michael, Bolognesi, Colombo R.
Published in 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16.10.2023)
Published in 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) (16.10.2023)
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Conference Proceeding
Dual Gate HEMT: Compact Cascode for Low-Noise Amplification
Bonomo, Giorgio, Ciabattini, Filippo, Saranovac, Tamara, Kostelac, Fran, Hamzeloui, Sara, Marti, Diego, Fluckizer, Ralf, Ostinelli, Olivier J. S., Bolognesi, Colombo R.
Published in 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM) (20.05.2024)
Published in 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM) (20.05.2024)
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Conference Proceeding