Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers
Lautenschlaeger, Stefan, Eisermann, Sebastian, Hofmann, Michael N., Roemer, Udo, Pinnisch, Melanie, Laufer, Andreas, Meyer, Bruno K., von Wenckstern, Holger, Lajn, Alexander, Schmidt, Florian, Grundmann, Marius, Blaesing, Juergen, Krost, Alois
Published in Journal of crystal growth (01.07.2010)
Published in Journal of crystal growth (01.07.2010)
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Journal Article
Spontaneous and Position-Controlled Epitaxial Growth of ZnO Nanowires on AlN/Si by CVD
Kolhep, Maximilian, Bläsing, Jürgen, Strittmatter, André, Zacharias, Margit
Published in Crystal growth & design (04.10.2023)
Published in Crystal growth & design (04.10.2023)
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Journal Article
MOVPE growth of high-quality Al0.1Ga0.9N on Si(111) substrates for UV-LEDs
Saengkaew, Phannee, Dadgar, Armin, Blaesing, Juergen, Bastek, Barbara, Bertram, Frank, Reiher, Fabian, Hums, Christoph, Noltemeyer, Martin, Hempel, Thomas, Veit, Peter, Christen, Juergen, Krost, Alois
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
High resistive buffer layers by Fermi level engineering
Dadgar, Armin, Borgmann, Ralf, Bläsing, Jürgen, Strittmatter, André
Published in Journal of applied physics (14.07.2023)
Published in Journal of applied physics (14.07.2023)
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Journal Article
Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition
Kolhep, Maximilian, Sun, Cheng, Bläsing, Jürgen, Christian, Björn, Zacharias, Margit
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01.05.2021)
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01.05.2021)
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Journal Article
Sputter Epitaxy of AlN and GaN on Si(111)
Dadgar, Armin, Hörich, Florian, Borgmann, Ralf, Bläsing, Jürgen, Schmidt, Gordon, Veit, Peter, Christen, Jürgen, Strittmatter, André
Published in Physica status solidi. A, Applications and materials science (01.04.2023)
Published in Physica status solidi. A, Applications and materials science (01.04.2023)
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Journal Article
Analysis of InAsSb/GaAs submonolayer stacks
Quandt, David, Bläsing, Jürgen, Strittmatter, André
Published in Journal of crystal growth (15.07.2018)
Published in Journal of crystal growth (15.07.2018)
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Journal Article
Blue shift of the absorption onset and bandgap bowing in rutile GexSn1−xO2
Kluth, Elias, Nagashima, Yo, Osawa, Shohei, Hirose, Yasushi, Bläsing, Jürgen, Strittmatter, André, Goldhahn, Rüdiger, Feneberg, Martin
Published in Applied physics letters (16.09.2024)
Published in Applied physics letters (16.09.2024)
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Journal Article
Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
Moser, Pascal, Bläsing, Jürgen, Dadgar, Armin, Hempel, Thomas, Christen, Jürgen, Krost, Alois
Published in Japanese Journal of Applied Physics (01.03.2011)
Published in Japanese Journal of Applied Physics (01.03.2011)
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Journal Article
Laser-assisted local metal–organic vapor phase epitaxy
Trippel, Max, Bläsing, Jürgen, Wieneke, Matthias, Dadgar, Armin, Schmidt, Gordon, Bertram, Frank, Christen, Jürgen, Strittmatter, André
Published in Review of scientific instruments (01.11.2022)
Published in Review of scientific instruments (01.11.2022)
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Journal Article
The impurity size-effect and phonon deformation potentials in wurtzite GaN
Kluth, Elias, Wieneke, Matthias, Bläsing, Jürgen, Witte, Hartmut, Lange, Karsten, Dadgar, Armin, Goldhahn, Rüdiger, Feneberg, Martin
Published in Semiconductor science and technology (01.09.2020)
Published in Semiconductor science and technology (01.09.2020)
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Journal Article
Properties of C‐doped GaN
Lesnik, Andreas, Hoffmann, Marc P., Fariza, Aqdas, Bläsing, Jürgen, Witte, Hartmut, Veit, Peter, Hörich, Florian, Berger, Christoph, Hennig, Jonas, Dadgar, Armin, Strittmatter, André
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article
Crack-Free, Highly Conducting GaN Layers on Si Substrates by Ge Doping
Dadgar, Armin, Bläsing, Jürgen, Diez, Annette, Krost, Alois
Published in Applied physics express (01.01.2011)
Published in Applied physics express (01.01.2011)
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Journal Article
Characterization of AlInN/AlN/GaN FET structures using x-ray diffraction, x-ray reflectometry and grazing incidence x-ray fluorescence analysis
Lesnik, Andreas, Bläsing, Jürgen, Hennig, Jonas, Dadgar, Armin, Krost, Alois
Published in Journal of physics. D, Applied physics (03.09.2014)
Published in Journal of physics. D, Applied physics (03.09.2014)
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Journal Article
Low-resistivity vertical current transport across AlInN/GaN interfaces
Sana, Prabha, Seneza, Cleophace, Berger, Christoph, Witte, Hartmut, Schmidt, Marc-Peter, Bläsing, Jürgen, Neugebauer, Silvio, Hoerich, Florian, Dadgar, Armin, Strittmatter, André
Published in Japanese Journal of Applied Physics (01.01.2021)
Published in Japanese Journal of Applied Physics (01.01.2021)
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Journal Article
Impact of AlN/Si Nucleation Layers Grown Either by NH3‐MBE or MOCVD on the Properties of AlGaN/GaN HFETs
Yacoub, Hady, Zweipfennig, Thorsten, Kalisch, Holger, Vescan, Andrei, Dadgar, Armin, Wieneke, Matthias, Bläsing, Jürgen, Strittmatter, A., Rennesson, Stephanie, Semond, Fabrice
Published in Physica status solidi. A, Applications and materials science (09.05.2018)
Published in Physica status solidi. A, Applications and materials science (09.05.2018)
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Journal Article