Thermal relaxation phenomena in the formation of device-quality SiO2/Si interfaces
LUCOVSKY, G, BJORKMAN, C. H, YASUDA, T, EMMERICHS, U, MEYER, C, LEO, K, KURZ, H
Published in Japanese journal of applied physics (01.12.1993)
Published in Japanese journal of applied physics (01.12.1993)
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Conference Proceeding
Integration of wet-chemical processing with low temperature plasma-assisted processes for the formation of device-quality Si/SiO2 interfaces in Si(111) surfaces
YASUDA, T, BJORKMAN, C. H, MA, Y, LU, Z, LUCOVSKY, G, EMMERICHS, U, MEYER, C, LEO, K, KURZ, H
Published in Microelectronic engineering (01.08.1994)
Published in Microelectronic engineering (01.08.1994)
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Journal Article
Atomic scale morphology of hydrogen-terminated Si(100) surfaces studied by Fourier-transform infrared attenuated total reflection spectroscopy and scanning probe microscopies
BJORKMAN, C. H, FUKUDA, M, YAMAZAKI, T, MIYAZAKI, S, HIROSE, M
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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Journal Article
The effect of post-deposition thermal processing on MOS gate oxides formed by remote PECVD
FITCH, J. T, KIM, S. S, BJORKMAN, C. H, LUCOVSKY, G
Published in Journal of electronic materials (01.02.1990)
Published in Journal of electronic materials (01.02.1990)
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Journal Article
Local atomic structure at thermally grown Si/SiO2 interfaces
Fitch, J.T., Bjorkman, C.H., Lucovsky, G., Pollak, F.H., Yin, X.
Published in Applied surface science (01.10.1989)
Published in Applied surface science (01.10.1989)
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Journal Article
Second-harmonic response of chemically modified vicinal Si(111) surfaces
Emmerichs, U, Meyer, C, Bakker, HJ, Kurz, H, Bjorkman, CH, Shearon, Jr, CE, Ma, Y, Yasuda, T, Jing, Z, Lucovsky, G, Whitten, JL
Published in Physical review. B, Condensed matter (15.08.1994)
Published in Physical review. B, Condensed matter (15.08.1994)
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Journal Article
Thermal Relaxation Phenomena in the Formation of Device-Quality SiO 2 /Si Interfaces
Lucovsky, G., Bjorkman, C. H., Yasuda, T., Emmerichs, U., Meyer, C., Leo, K., Kurz, H.
Published in Japanese Journal of Applied Physics (01.12.1993)
Published in Japanese Journal of Applied Physics (01.12.1993)
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Journal Article
MERIE Induced Flatband Shifts Of MNOS Devices
Bjorkman, C.H., Shan, H., Welch, M., Sambei, T., Hori, T., Okano, H., Namose, I., Ikegami, M.
Published in 2nd International Symposium on Plasma Process-Induced Damage (1997)
Published in 2nd International Symposium on Plasma Process-Induced Damage (1997)
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Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques
Lupke, G., Wolter, F., Emmerichs, U., Meyer, C., Kurz, H., Yasuda, T., Lucovsky, G., Bjorkman, C.H.
Published in Proceedings of 1994 Nonlinear Optics: Materials, Fundamentals and Applications (1994)
Published in Proceedings of 1994 Nonlinear Optics: Materials, Fundamentals and Applications (1994)
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