Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
Bisi, Davide, Meneghini, Matteo, de Santi, Carlo, Chini, Alessandro, Dammann, Michael, Bruckner, Peter, Mikulla, Michael, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.10.2013)
Published in IEEE transactions on electron devices (01.10.2013)
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Journal Article
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements
Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Stocco, Antonio, Chini, Alessandro, Pantellini, Alessio, Lanzieri, Claudio, Nanni, Antonio, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE transactions on electron devices (01.12.2014)
Published in IEEE transactions on electron devices (01.12.2014)
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Journal Article
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
Bisi, Davide, Meneghini, Matteo, Marino, Fabio Alessio, Marcon, Denis, Stoffels, Steve, Van Hove, Marleen, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE electron device letters (01.10.2014)
Published in IEEE electron device letters (01.10.2014)
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Journal Article
Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
Bisi, Davide, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, Meneghini, Matteo, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico
Published in IEEE electron device letters (01.03.2020)
Published in IEEE electron device letters (01.03.2020)
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Journal Article
Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs
Bisi, Davide, De Santi, Carlo, Meneghini, Matteo, Wienecke, Steven, Guidry, Matt, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh K., Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Tests and Design of Welded-bar Angle Connections of Precast Floor Elements
Lago, Bruno Dal, Galdo, Marco Del, Bisi, Davide
Published in Journal of Advanced Concrete Technology (05.02.2022)
Published in Journal of Advanced Concrete Technology (05.02.2022)
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Journal Article
Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate
Bisi, Davide, Meneghini, Matteo, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
Published in Physica status solidi. A, Applications and materials science (01.05.2015)
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Journal Article
Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition
Chan, Silvia H., Bisi, Davide, Tahhan, Maher, Gupta, Chirag, DenBaars, Steven P., Keller, Stacia, Zanoni, Enrico, Mishra, Umesh K.
Published in Applied physics express (01.04.2018)
Published in Applied physics express (01.04.2018)
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Journal Article
Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices
Chan, Silvia H., Tahhan, Maher, Liu, Xiang, Bisi, Davide, Gupta, Chirag, Koksaldi, Onur, Li, Haoran, Mates, Tom, DenBaars, Steven P., Keller, Stacia, Mishra, Umesh K.
Published in Japanese Journal of Applied Physics (01.02.2016)
Published in Japanese Journal of Applied Physics (01.02.2016)
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Journal Article
Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs
Benvegnù, Agostino, Bisi, Davide, Laurent, Sylvain, Meneghini, Matteo, Meneghesso, Gaudenzio, Barataud, Denis, Zanoni, Enrico, Quere, Raymond
Published in International journal of microwave and wireless technologies (01.06.2016)
Published in International journal of microwave and wireless technologies (01.06.2016)
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Journal Article
Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs
Meneghesso, Gaudenzio, Bisi, Davide, Rossetto, Isabella, Ruzzarin, Maria, Meneghini, Matteo, Zanoni, Enrico
Published in 2016 IEEE International Integrated Reliability Workshop (IIRW) (01.01.2016)
Published in 2016 IEEE International Integrated Reliability Workshop (IIRW) (01.01.2016)
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Conference Proceeding
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices
Bisi, Davide, Chan, Silvia H., Tahhan, Maher, Koksaldi, Onur S., Keller, Stacia, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, Enrico, Mishra, Umesh K.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues
Meneghesso, Gaudenzio, Meneghini, Matteo, Bisi, Davide, Silvestri, Riccardo, Zanandrea, Alberto, Hilt, Oliver, Bahat-Treidel, Eldad, Brunner, F., Knauer, A., Wuerfl, Joachim, Zanoni, Enrico
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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Journal Article
Temperature-Dependent Dynamic R}}} in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage
Meneghini, Matteo, Vanmeerbeek, Piet, Silvestri, Riccardo, Dalcanale, Stefano, Banerjee, Abhishek, Bisi, Davide, Zanoni, Enrico, Meneghesso, Gaudenzio, Moens, Peter
Published in IEEE transactions on electron devices (01.03.2015)
Published in IEEE transactions on electron devices (01.03.2015)
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Journal Article
Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs
Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Ruzzarin, Maria, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico
Published in IEEE electron device letters (01.04.2016)
Published in IEEE electron device letters (01.04.2016)
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Journal Article
Observation of I D -V D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
Bisi, Davide, Wienecke, Steven, Romanczyk, Brian, Li, Haoran, Ahmadi, Elaheh, Keller, Stacia, Guidry, Matthew, De Santi, Carlo, Meneghini, Matteo, Meneghesso, Gaudenzio, Mishra, Umesh K., Zanoni, Enrico
Published in IEEE electron device letters (01.03.2020)
Published in IEEE electron device letters (01.03.2020)
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Journal Article
Improved Dynamic R ON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
Ji, Dong, Li, Wenwen, Agarwal, Anchal, Chan, Silvia H., Haller, Jeffrey, Bisi, Davide, Labrecque, Michelle, Gupta, Chirag, Cruse, Bill, Lal, Rakesh, Keller, Stacia, Mishra, Umesh K., Chowdhury, Srabanti
Published in IEEE electron device letters (01.07.2018)
Published in IEEE electron device letters (01.07.2018)
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Journal Article
Short-Circuit Capability with GaN HEMTs : Invited
Bisi, Davide, Cruse, Bill, Zuk, Philip, Parikh, Primit, Mishra, Umesh, Hosoda, Tsutomu, Kamiyama, Masamichi, Kanamura, Masahito
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Short-Circuit Capability Demonstrated for GaN Power Switches
Bisi, Davide, Gritters, John, Hosoda, Tsutomu, Kamiyama, Masamichi, Cruse, Bill, Huang, YuLu, McKay, Jim, Gupta, Geetak, Lal, Rakesh, Neufeld, Carl, Zuk, Philip, Wu, YiFeng, Parikh, Primit, Mishra, Umesh
Published in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC) (14.06.2021)
Published in 2021 IEEE Applied Power Electronics Conference and Exposition (APEC) (14.06.2021)
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Conference Proceeding