High efficiency GaN-based LEDs and lasers on SiC
Edmond, John, Abare, Amber, Bergman, Mike, Bharathan, Jayesh, Lee Bunker, Kristin, Emerson, Dave, Haberern, Kevin, Ibbetson, James, Leung, Michael, Russel, Phil, Slater, David
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Journal Article
Conference Proceeding
Multicolor Organic Light-Emitting Diodes Processed by Hybrid Inkjet Printing
Chang, Shun-Chi, Liu, Jie, Bharathan, Jayesh, Yang, Yang, Onohara, Jun, Kido, Junji
Published in Advanced materials (Weinheim) (01.06.1999)
Published in Advanced materials (Weinheim) (01.06.1999)
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Journal Article
Poisson Ratio of Epitaxial Germanium Films Grown on Silicon
Bharathan, Jayesh, Narayan, Jagdish, Rozgonyi, George, Bulman, Gary E.
Published in Journal of electronic materials (2013)
Published in Journal of electronic materials (2013)
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Journal Article
Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
Bharathan, Jayesh, Zhou, Honghui, Narayan, Jagdish, Rozgonyi, George, Bulman, Gary E.
Published in Journal of electronic materials (01.09.2014)
Published in Journal of electronic materials (01.09.2014)
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Journal Article
Organic/polymeric electroluminescent devices processed by hybrid ink-jet printing
Yang, Yang, Chang, Shun-Chi, Bharathan, Jayesh, Liu, Jie
Published in Journal of materials science. Materials in electronics (01.03.2000)
Published in Journal of materials science. Materials in electronics (01.03.2000)
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Journal Article
ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING
BERGMANN MICHAEL, RAFFETTO MARK, EMERSON DAVID, HABERERN KEVIN, BHARATHAN JAYESH, LI TING, IBBETSON JAMES
Year of Publication 12.04.2012
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Year of Publication 12.04.2012
Patent
ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING
BERGMANN MICHAEL, RAFFETTO MARK, EMERSON DAVID, HABERERN KEVIN, BHARATHAN JAYESH, LI TING, IBBETSON JAMES
Year of Publication 22.02.2012
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Year of Publication 22.02.2012
Patent
HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE
DONOFRIO MATTHEW, SLATER DAVID BEARDSLEY JR, EDMOND JOHN ADAM, BHARATHAN JAYESH
Year of Publication 23.12.2010
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Year of Publication 23.12.2010
Patent
HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE
EDMOND, John, Adam, BHARATHAN, Jayesh, DONOFRIO, Matthew, SLATER, David, Beardsley, Jr
Year of Publication 13.02.2019
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Year of Publication 13.02.2019
Patent
Improvement in leakage characteristics of Ge-on-Si photodetectors
Bharathan, J., Bulman, G. E.
Published in The 9th International Conference on Group IV Photonics (GFP) (01.08.2012)
Published in The 9th International Conference on Group IV Photonics (GFP) (01.08.2012)
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Conference Proceeding
LED with a lenticular surface
Donofrio, Matthew, Edmond, John, Adam, Slater, David, Beardsley, Jr, Bharathan, Jayesh
Year of Publication 08.03.2017
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Year of Publication 08.03.2017
Patent
ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING
HABERERN, KEVIN, BHARATHAN, JAYESH, IBBETSON, JAMES, LI, TING, EMERSON, DAVID, RAFFETTO, MARK, BERGMANN, MICHAEL
Year of Publication 18.03.2015
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Year of Publication 18.03.2015
Patent
High efficiency group III nitride LED with lenticular surface
DONOFRIO MATTHEW, SLATER, JR. DAVID B, EDMOND JOHN ADAM, BHARATHAN JAYESH
Year of Publication 04.11.2014
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Year of Publication 04.11.2014
Patent
Ultra-thin ohmic contacts for p-type nitride light emitting devices
BERGMANN MICHAEL, RAFFETTO MARK, EMERSON DAVID, HABERERN KEVIN, BHARATHAN JAYESH, LI TING, IBBETSON JAMES
Year of Publication 24.06.2014
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Year of Publication 24.06.2014
Patent
HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE
DONOFRIO MATTHEW, SLATER, JR. DAVID B, EDMOND JOHN ADAM, BHARATHAN JAYESH
Year of Publication 19.06.2014
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Year of Publication 19.06.2014
Patent