Copper alloy seed integration for reliability improvement
Besling, Wim F.A., Federspiel, X., Vanypre, T., Torres, Joaquin
Published in Microelectronic engineering (01.12.2005)
Published in Microelectronic engineering (01.12.2005)
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Conference Proceeding
Continuity and morphology of TaN barriers deposited by Atomic Layer Deposition and comparison with physical vapor deposition
Besling, Wim F.A., Ignacimouttou, Marie-Laurence, Humbert, Aurelie, Mellier, Maxime, Torres, Joaquin
Published in Microelectronic engineering (01.10.2004)
Published in Microelectronic engineering (01.10.2004)
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Conference Proceeding
Diffusion Barrier Deposition on a Copper Surface by Atomic Layer Deposition
Elers, K.-E., Saanila, V., Soininen, P. J., Li, W.-M., Kostamo, J. T., Haukka, S., Juhanoja, J., Besling, W. F. A.
Published in Chemical vapor deposition (04.07.2002)
Published in Chemical vapor deposition (04.07.2002)
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Dielectric Material Options for Integrated Capacitors
Ruhl, Guenther, Lehnert, Wolfgang, Lukosius, Mindaugas, Wenger, Christian, Baristiran Kaynak, Canan, Blomberg, Tom, Haukka, Suvi, Baumann, Peter K., Besling, Wim, Roest, Aarnoud, Riou, Benoit, Lhostis, Sandrine, Halimaou, Aomar, Roozeboom, Fred, Langereis, Erik, Kessels, W. M. M., Zauner, Andy, Rushworth, Simon
Published in ECS journal of solid state science and technology (01.01.2014)
Published in ECS journal of solid state science and technology (01.01.2014)
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Development of sub-10-nm atomic layer deposition barriers for Cu/low- k interconnects
Beyer, Gerald, Satta, Alessandra, Schuhmacher, Jörg, Maex, Karen, Besling, Wim, Kilpela, Olli, Sprey, Hessel, Tempel, Georg
Published in Microelectronic engineering (01.10.2002)
Published in Microelectronic engineering (01.10.2002)
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Conference Proceeding