On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications - part I: transistor DC design considerations
Cressler, John D, Comfort, James H, Crabbe, Emmanuel F, Patton, Gary L, Stork, Johannes M C, Sun, Jack Y-C, Meyerson, Bernard S
Published in IEEE transactions on electron devices (01.01.1993)
Published in IEEE transactions on electron devices (01.01.1993)
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Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire
Mathew, S.J., Guofu Niu, Dubbelday, W.B., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., Lagnado, I.
Published in IEEE electron device letters (01.04.1999)
Published in IEEE electron device letters (01.04.1999)
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SiGe heterojunctions: devices and applications
Arienzo, Maurizio, Comfort, James H., Crabbé, Emmanuel F., Harame, David L., Iyer, Subramanian S., Kesan, Vijay P., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C., Sun, Yuan-Chen
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)
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Foundation of rf CMOS and SiGe BiCMOS technologies
Dunn, James S, Ahlgren, David C, Coolbaugh, Douglas D, Feilchenfeld, Natalie B
Published in IBM journal of research and development (01.03.2003)
Published in IBM journal of research and development (01.03.2003)
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SiGe-channel heterojunction p-MOSFET's
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B.
Published in IEEE transactions on electron devices (01.01.1994)
Published in IEEE transactions on electron devices (01.01.1994)
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75-GHz fT SiGe-base heterojunction bipolar transistors
PATTON, G. L, COMFORT, J. H, MEYERSON, B. S, CRABBE, E. F, SCILLA, G. J, DE FRESART, E, STORK, J. M. C, SUN, J. Y.-C, HARAME, D. L, BURGHARTZ, J. N
Published in IEEE electron device letters (01.04.1990)
Published in IEEE electron device letters (01.04.1990)
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Heterojunction bipolar transistors using Si-Ge alloys
Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S., Harame, D.L.
Published in IEEE transactions on electron devices (01.10.1989)
Published in IEEE transactions on electron devices (01.10.1989)
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High-mobility modulation-doped graded SiGe-channel p-MOSFET's
VERDOCKT-VANDEBROEK, S, CRABBE, E. F, WARREN, A. C, MEYERSON, B. S, HARAME, D. L, RESTLE, P. J, STORK, J. M. C, MEGDANIS, A. C, STANIS, C. L, BRIGHT, A. A, KROESEN, G. M. W
Published in IEEE electron device letters (01.08.1991)
Published in IEEE electron device letters (01.08.1991)
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SiGe alloys: growth, properties and applications
Arienzo, Maurizio, Iyer, Subramanian S., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C.
Published in Applied surface science (01.01.1991)
Published in Applied surface science (01.01.1991)
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73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
Crabbe, E.F., Comfort, J.H., Lee, W., Cressler, J.D., Meyerson, B.S., Megdanis, A.C., Sun, J.Y.-C., Stork, J.M.C.
Published in IEEE electron device letters (01.05.1992)
Published in IEEE electron device letters (01.05.1992)
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Si/Si sub(1-x)Ge sub(x) valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure
Gan, Chock H, del Alamo, Jesus A, Bennett, Brian R, Meyerson, Bernard S, Crabbe, Emmanuel F, Sodini, Charles G, Reif, L Rafael
Published in IEEE transactions on electron devices (01.01.1994)
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Published in IEEE transactions on electron devices (01.01.1994)
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