Search Results - "BENEVENTI GIOVANNI BETTI" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

by Perniola, Luca, Sousa, Veronique, Fantini, Andrea, Arbaoui, Edrisse, Bastard, Audrey, Armand, Marilyn, Fargeix, Alain, Jahan, Carine, Nodin, Jean-Francois, Persico, Alain, Blachier, Denis, Toffoli, Alain, Loubriat, Sebastien, Gourvest, Emanuel, Betti Beneventi, Giovanni, Feldis, Helene, Maitrejean, Sylvain, Lhostis, Sandrine, Roule, Anne, Cueto, Olga, Reimbold, Gilles, Poupinet, Ludovic, Billon, Thierry, De Salvo, Barbara, Bensahel, Daniel, Mazoyer, Pascale, Annunziata, Roberto, Zuliani, Paola, Boulanger, Fabien
Published in IEEE electron device letters (01.05.2010)

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Journal Article

Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening

by Beneventi, Giovanni Betti, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio
Published in IEEE transactions on electron devices (01.01.2015)

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Journal Article

A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics

A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics

by Betti Beneventi, Giovanni, Reggiani, Susanna, Gnudi, Antonio, Gnani, Elena, Alian, Alireza, Collaert, Nadine, Mocuta, Anda, Thean, Aaron, Baccarani, Giorgio
Published in IEEE transactions on electron devices (01.11.2015)

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Journal Article

Physics-Based Statistical Modeling of PCM Current Drift Including Negative-Drift-Coefficients

Physics-Based Statistical Modeling of PCM Current Drift Including Negative-Drift-Coefficients

by Betti Beneventi, Giovanni, Ferro, Massimo, Calderoni, Alessandro, Fantini, Paolo
Published in IEEE electron device letters (01.07.2013)

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Journal Article

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

by Gaillardon, Pierre-Emmanuel, Sacchetto, Davide, Beneventi, Giovanni Betti, Ben Jamaa, M. Haykel, Perniola, Luca, Clermidy, Fabien, O'Connor, Ian, De Micheli, Giovanni
Published in IEEE transactions on nanotechnology (01.01.2013)

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Journal Article

hbox/f Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

hbox/f Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

by Beneventi, Giovanni Betti, Ferro, M., Fantini, P.
Published in IEEE electron device letters (01.11.2012)

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Journal Article

Assessment of Self-Induced Joule-Heating Effect in the I―V Readout Region of Polycrystalline Ge2Sb2Te5 Phase-Change Memory

Assessment of Self-Induced Joule-Heating Effect in the I―V Readout Region of Polycrystalline Ge2Sb2Te5 Phase-Change Memory

by BETTI BENEVENTI, Giovanni, PERNIOLA, Luca, HUBERT, Quentin, GLIERE, Alain, LARCHER, Luca, PAVAN, Paolo, DE SALVO, Barbara
Published in IEEE transactions on electron devices (2012)

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Journal Article

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

by Beneventi, Giovanni Betti, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio
Published in IEEE transactions on electron devices (01.03.2014)

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Journal Article

On the limitations of transimpedance amplifiers as tools for low-frequency noise characterization

On the limitations of transimpedance amplifiers as tools for low-frequency noise characterization

by Borgarino, Mattia, Betti Beneventi, Giovanni, Doga, Valerio, Pavan, Paolo
Published in Microelectronics (01.02.2014)

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Journal Article

1/f Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

1/f Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives

by BENEVENTI, Giovanni Betti, FERRO, Massimo, FANTINI, Paolo
Published in IEEE electron device letters (01.11.2012)

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Journal Article

Can Interface Traps Suppress TFET Ambipolarity?

Can Interface Traps Suppress TFET Ambipolarity?

by Beneventi, Giovanni Betti, Gnani, Elena, Gnudi, Antonio, Reggiani, Susanna, Baccarani, Giorgio
Published in IEEE electron device letters (01.12.2013)

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Journal Article

Emerging memory technologies for reconfigurable routing in FPGA architecture

Emerging memory technologies for reconfigurable routing in FPGA architecture

by Gaillardon, Pierre-Emmanuel, Ben-Jamaa, M Haykel, Beneventi, Giovanni Betti, Clermidy, Fabien, Perniola, Luca
Published in 2010 17th IEEE International Conference on Electronics, Circuits and Systems (01.12.2010)

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Conference Proceeding

Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD tools

by Betti Beneventi, Giovanni, Reggiani, Susanna, Gnudi, Antonio, Gnani, Elena, Aliane, Alireza, Collaert, Nadine, Mocuta, Anda, Thean, Aaron, Baccarani, Giorgio
Published in EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (01.01.2015)

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Conference Proceeding

A New Approach to the Analysis of Electromagnetic FEM Simulations Results at Electric Field Singularities

A New Approach to the Analysis of Electromagnetic FEM Simulations Results at Electric Field Singularities

by Betti Beneventi, G., DalRe, M., Vincetti, L.
Published in Advanced electromagnetics (19.09.2018)

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Journal Article

$Assessment of Self-Induced Joule-Heating Effect in the I- V Readout Region of Polycrystalline \hbox\hbox\hbox Phase-Change Memory$

Assessment of Self-Induced Joule-Heating Effect in the I- V Readout Region of Polycrystalline \hbox\hbox\hbox Phase-Change Memory

by Beneventi, G. B., Perniola, L., Hubert, Q., Gliere, A., Larcher, L., Pavan, P., De Salvo, B.
Published in IEEE transactions on electron devices (01.01.2012)

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Journal Article

AN INDUCTION HEATING SEALING DEVICE

AN INDUCTION HEATING SEALING DEVICE

by RÅBE, Magnus, WIJK, Magnus, BENEVENTI, Giovanni Betti
Year of Publication 04.01.2024

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Patent

AN INDUCTION HEATING SEALING DEVICE

AN INDUCTION HEATING SEALING DEVICE

by RÅBE, Magnus, WIJK, Magnus, BETTI BENEVENTI, Giovanni
Year of Publication 30.06.2022

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Patent

AN INDUCTION HEATING SEALING DEVICE

AN INDUCTION HEATING SEALING DEVICE

by RÅBE, Magnus, WIJK, Magnus, BETTI BENEVENTI, Giovanni
Year of Publication 29.06.2022

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Patent

Packaging material; and a sealing system for such packaging material

Packaging material; and a sealing system for such packaging material

by Beneventi, Giovanni Betti, Guidetti, Gloria, Hurdalek, Ladislav, Bierlein, Pär, Wamsler, Michael
Year of Publication 03.09.2024

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Patent

SHAPED COLLET FOR ELECTRICAL STRESS GRADING IN CORONA IGNITION SYSTEMS

SHAPED COLLET FOR ELECTRICAL STRESS GRADING IN CORONA IGNITION SYSTEMS

by DI GIUSEPPE, Alessio, DAL RE, Massimo, MILAN, Giulio, PAPI, Stefano, BETTI BENEVENTI, Giovanni
Year of Publication 17.04.2024

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Patent