Band structure calculations for dilute nitride quantum wells under compressive or tensile strain
Carrère, H, Marie, X, Barrau, J, Amand, T, Bouzid, S Ben, Sallet, V, Harmand, J-C
Published in Journal of physics. Condensed matter (11.08.2004)
Published in Journal of physics. Condensed matter (11.08.2004)
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Journal Article
Optical properties of GaInNAsSb/GaAs/GaAs1-xNx (x ≈ 10%) saturable absorber quantum wells
BEN BOUZID, S, ZAGHDOUDI, W, HAMDOUNI, A, BEN SEDRINE, N, BOUSBIH, F, HARMAND, J. C, CHTOUROU, R
Published in Applied surface science (15.09.2008)
Published in Applied surface science (15.09.2008)
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Journal Article
Effect of nitrogen in the electronic structure of GaAsN and GaInAs(N) compounds grown by molecular beam epitaxy
Ben Bouzid, S., Bousbih, F., Chtourou, R., Harmand, J.C., Voisin, P.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.09.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.09.2004)
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Journal Article
Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs1−xNx structures
Hamdouni, A., Bousbih, F., Ben Bouzid, S., Oueslati, M., Chtourou, R., Harmand, J.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (20.11.2005)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (20.11.2005)
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Journal Article
Band gap energy, nitrogen localized states and GaN-like phonon in heavily doped GaAsN grown by molecular beam epitaxy
BEN BOUZID, S, BOUSBIH, F, CHTOUROU, R, TOUNIE, E
Published in Solid state communications (01.04.2004)
Published in Solid state communications (01.04.2004)
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Journal Article
Observation of localization complexes and phonons replicas in heavily doped GaAs1−xNx
Bousbih, F., Ben Bouzid, S., Chtourou, R., Harmand, J.C.
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Journal Article
Conference Proceeding
Photoluminescence study of the nitrogen content effect on GaAs/GaAs1−xNx/GaAs/AlGaAs: (Si) quantum well
Hamdouni, A., Bousbih, F., Ben bouzid, S., Aloulou, S., Harmand, J.C., Chtourou, R.
Published in Materials Science and Engineering C: Biomimetic Materials, Sensors and Systems (01.07.2008)
Published in Materials Science and Engineering C: Biomimetic Materials, Sensors and Systems (01.07.2008)
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Journal Article
Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds
Bousbih, F, Bouzid, S.Ben, Chtourou, R, Charfi, F.F, Harmand, J.C, Ungaro, G
Published in Materials Science & Engineering C (01.09.2002)
Published in Materials Science & Engineering C (01.09.2002)
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Journal Article
Optical properties of GaInNAsSb/GaAs/GaAs 1− x N x ( x ≈ 10%) saturable absorber quantum wells
Ben Bouzid, S., Zaghdoudi, W., Hamdouni, A., Ben Sedrine, N., Bousbih, F., Harmand, J.C., Chtourou, R.
Published in Applied surface science (15.09.2008)
Published in Applied surface science (15.09.2008)
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Journal Article
Strong coupling between bi-dimensional electron gas and nitrogen localized states in heavily doped GaAs 1− x N x structures
Hamdouni, A., Bousbih, F., Ben Bouzid, S., Oueslati, M., Chtourou, R., Harmand, J.C.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2005)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2005)
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Journal Article
Effect of nitrogen in the electronic structure of GaAsN and GalnAs(N) compounds grown by molecular beam epitaxy
Bouzid, S Ben, Bousbih, F, Chtourou, R, Harmand, J C, Voisin, P
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.09.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.09.2004)
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Journal Article
Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping
Sedrine, N. Ben, Hamdouni, A., Rihani, J., Bouzid, S. Ben, Bousbih, F.
Published in American journal of applied sciences (01.01.2007)
Published in American journal of applied sciences (01.01.2007)
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Journal Article
Photoluminescence study of the nitrogen content effect on GaAs/GaAs sub(1) sub(-) sub(x)N sub(x)/GaAs/AlGaAs: (Si) quantum well
Hamdouni, A, Bousbih, F, Ben bouzid, S, Aloulou, S, Harmand, J C, Chtourou, R
Published in Materials Science and Engineering C: Biomimetic and Supramolecular Systems (01.07.2008)
Published in Materials Science and Engineering C: Biomimetic and Supramolecular Systems (01.07.2008)
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Journal Article