Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance
ZHANG, A. P, ROWLAND, L. B, ALLEN, A. F, COOK, J, FOPPES, J, EDWARD, B. J, KAMINSKY, E. B, TUCKER, J. B, BEAUPRE, R. A, KRETCHMER, J. W, GARRETT, J. L, VERTIATCHIKH, A, KOLEY, G, CHA, H. Y
Published in Journal of electronic materials (01.05.2003)
Published in Journal of electronic materials (01.05.2003)
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Journal Article
Microwave power SiC MESFETs and GaN HEMTs
Zhang, A.P., Rowland, L.B., Kaminsky, E.B., Kretchmer, J.W., Beaupre, R.A., Garrett, J.L., Tucker, J.B.
Published in Proceedings. IEEE Lester Eastman Conference on High Performance Devices (2002)
Published in Proceedings. IEEE Lester Eastman Conference on High Performance Devices (2002)
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Conference Proceeding
Microwave power SiC MESFETs and GaN HEMTs
Zhang, A.P., Rowland, L.B., Kaminsky, E.B., Kretchmer, J.W., Beaupre, R.A., Garrett, J.L., Tucker, J.B., Edward, B.J., Foppes, J., Allen, A.F.
Published in Solid-state electronics (01.05.2003)
Published in Solid-state electronics (01.05.2003)
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Journal Article
Time-Dependent Dielectric Breakdown of 4H-SiC/[Formula Omitted] MOS Capacitors
Gurfinkel, M, Horst, J.C, Suehle, J.S, Bernstein, J.B, Shapira, Y, Matocha, K.S, Dunne, G, Beaupre, R.A
Published in IEEE transactions on device and materials reliability (01.12.2008)
Published in IEEE transactions on device and materials reliability (01.12.2008)
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Magazine Article
Time-Dependent Dielectric Breakdown of 4H-SiC/ \hbox MOS Capacitors
Gurfinkel, M., Horst, J.C., Suehle, J.S., Bernstein, J.B., Shapira, Y., Matocha, K.S., Dunne, G., Beaupre, R.A.
Published in IEEE transactions on device and materials reliability (01.12.2008)
Published in IEEE transactions on device and materials reliability (01.12.2008)
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Magazine Article