Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate
BAVENCOVE, A.-L, SALOMON, D, LE SI DANG, GILET, P, LAFOSSAS, M, MARTIN, B, DUSSAIGNE, A, LEVY, F, ANDRE, B, FERRET, P, DURAND, C, EYMERY, J
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Published in Electronics letters (23.06.2011)
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Light emitting diodes based on GaN core/shell wires grown by MOVPE on n-type Si substrate
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Published in Electronics letters (23.06.2011)
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Published in Electronics letters (23.06.2011)
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