Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults?
Wieneke, Matthias, Noltemeyer, Martin, Bastek, Barbara, Rohrbeck, Antje, Witte, Hartmut, Veit, Peter, Bläsing, Jürgen, Dadgar, Armin, Christen, Jürgen, Krost, Alois
Published in Physica Status Solidi (b) (01.03.2011)
Published in Physica Status Solidi (b) (01.03.2011)
Get full text
Journal Article
MOVPE growth of high-quality Al0.1Ga0.9N on Si(111) substrates for UV-LEDs
Saengkaew, Phannee, Dadgar, Armin, Blaesing, Juergen, Bastek, Barbara, Bertram, Frank, Reiher, Fabian, Hums, Christoph, Noltemeyer, Martin, Hempel, Thomas, Veit, Peter, Christen, Juergen, Krost, Alois
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
Get full text
Journal Article
Fabrication, Self-Assembly, and Properties of Ultrathin AlN/GaN Porous Crystalline Nanomembranes: Tubes, Spirals, and Curved Sheets
Mei, Yongfeng, Thurmer, Dominic J, Deneke, Christoph, Kiravittaya, Suwit, Chen, Yuan-Fu, Dadgar, Armin, Bertram, Frank, Bastek, Barbara, Krost, Alois, Christen, Jürgen, Reindl, Thomas, Stoffel, Mathieu, Coric, Emica, Schmidt, Oliver G
Published in ACS nano (28.07.2009)
Published in ACS nano (28.07.2009)
Get full text
Journal Article
Excitonic transport in ZnO
Noltemeyer, Martin, Bertram, Frank, Hempel, Thomas, Bastek, Barbara, Polyakov, Andrey, Christen, Juergen, Brandt, Matthias, Lorenz, Michael, Grundmann, Marius
Published in Journal of materials research (14.09.2012)
Published in Journal of materials research (14.09.2012)
Get full text
Journal Article
Heavy Si doping: The key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults? : Polarization-Field Control in Nitride Light Emitters
WIENEKE, Matthias, NOLTEMEYER, Martin, BASTEK, Barbara, ROHRBECK, Antje, WITTE, Hartmut, VEIT, Peter, BLÄSING, Jürgen, DADGAR, Armin, CHRISTEN, Jürgen, KROST, Alois
Published in Physica status solidi. B. Basic research (2011)
Get full text
Published in Physica status solidi. B. Basic research (2011)
Journal Article
MOVPE growth of high‐quality Al 0.1 Ga 0.9 N on Si(111) substrates for UV‐LEDs
Saengkaew, Phannee, Dadgar, Armin, Blaesing, Juergen, Bastek, Barbara, Bertram, Frank, Reiher, Fabian, Hums, Christoph, Noltemeyer, Martin, Hempel, Thomas, Veit, Peter, Christen, Juergen, Krost, Alois
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
Get full text
Journal Article
Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy
Bastek, B., Bertram, F., Christen, J., Wernicke, T., Weyers, M., Kneissl, M., Kneissl, M.
Published in 2008 International Nano-Optoelectronics Workshop (01.08.2008)
Published in 2008 International Nano-Optoelectronics Workshop (01.08.2008)
Get full text
Conference Proceeding