Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET
Dutta, D., De, D. S., Fan, D., Roy, S., Alfieri, G., Camarda, M., Amsler, M., Lehmann, J., Bartolf, H., Goedecker, S., Jung, T. A.
Published in Applied physics letters (02.09.2019)
Published in Applied physics letters (02.09.2019)
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Journal Article
Dopant imaging of power semiconductor device cross sections
Gysin, U., Meyer, E., Glatzel, Th, Günzburger, G., Rossmann, H.R., Jung, T.A., Reshanov, S., Schöner, A., Bartolf, H.
Published in Microelectronic engineering (01.07.2016)
Published in Microelectronic engineering (01.07.2016)
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Journal Article
Improving the Design of the Shield for the Electric Field in SiC-Based Schottky-Rectifiers and Ion-Implantation Cascades by SPM Dopant-Imaging
Bartolf, H., Gysin, U., Glatzel, T., Rossmann, H.R., Jung, T.A., Reshanov, S.A., Schöner, A., Meyer, E.
Published in Microelectronic engineering (01.12.2015)
Published in Microelectronic engineering (01.12.2015)
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Journal Article
Nanoscale fabrication by intrinsic suppression of proximity-electron exposures and general considerations for easy and effective top–down fabrication
Bartolf, H, Inderbitzin, K, Gómez, L B, Engel, A, Schilling, A
Published in Journal of micromechanics and microengineering (01.12.2010)
Published in Journal of micromechanics and microengineering (01.12.2010)
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Journal Article
A novel edge termination for high voltage SiC devices
Mihaila, A., Sundaramoorthy, V. K., Minamisawa, R., Knoll, L., Bartolf, H., Bianda, E., Alfieri, G., Rahimo, M.
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Current-Induced Critical State in NbN Thin-Film Structures
Il’in, K., Siegel, M., Engel, A., Bartolf, H., Schilling, A., Semenov, A., Huebers, H.-W.
Published in Journal of low temperature physics (01.04.2008)
Published in Journal of low temperature physics (01.04.2008)
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Journal Article
Ultra-thin NbN films on Si: crystalline and superconducting properties
Ilin, K, Schneider, R, Gerthsen, D, Engel, A, Bartolf, H, Schilling, A, Semenov, A, Huebers, H-W, Freitag, B, Siegel, M
Published in Journal of physics. Conference series (01.02.2008)
Published in Journal of physics. Conference series (01.02.2008)
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Journal Article
Fabrication of metallic structures with lateral dimensions less than 15 nm and jC(T)-measurements in NbN micro-and nanobridges
BARTOLF, H, ENGEL, A, SCHILLING, A, IL'IN, K, SIEGEL, M
Published in Physica. C, Superconductivity (01.04.2008)
Published in Physica. C, Superconductivity (01.04.2008)
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Conference Proceeding
Journal Article
Temperature- and field-dependence of critical currents in NbN microbridges
Engel, A, Bartolf, H, Schilling, A, Il'in, K, Siegel, M, Semenov, A, Hübers, H-W
Published in Journal of physics. Conference series (01.02.2008)
Published in Journal of physics. Conference series (01.02.2008)
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Journal Article
Rare-earth intermetallic compounds at a magnetic instability
Löhneysen, H.v., Bartolf, H., Drotziger, S., Pfleiderer, C., Stockert, O., Souptel, D., Löser, W., Behr, G.
Published in Journal of alloys and compounds (09.02.2006)
Published in Journal of alloys and compounds (09.02.2006)
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Journal Article
Magnetic vortices in superconducting photon detectors
Engel, A., Bartolf, H., Schilling, A., Semenov, A., Hübers, H.-W., Il'in, K., Siegel, M.
Published in Journal of modern optics (20.01.2009)
Published in Journal of modern optics (20.01.2009)
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Journal Article
Conference Proceeding
Hall effect across the quantum phase transition of CeCuAu
Bartolf, H., Pfleiderer, C., Stockert, O., Vojta, M., Löhneysen, H.v.
Published in Physica. B, Condensed matter (01.04.2005)
Published in Physica. B, Condensed matter (01.04.2005)
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Journal Article
Magnetotransport in CeCu6-xAux
LÖHNEYSEN, H. V, BARTOLF, H, PFLEIDERER, C, OBERMAIR, F, VOJTA, M, WÖLFLE, P
Published in Physica. B, Condensed matter (01.05.2006)
Published in Physica. B, Condensed matter (01.05.2006)
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Conference Proceeding
Journal Article
JBS power-rectifiers for 1.7kV applications with conduction properties close to pure Schottky-design
Bartolf, H., Mihaila, A., Knoll, L., Sundaramoorthy, V. K., Minamisawa, R. A., Bianda, E.
Published in 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) (01.09.2015)
Published in 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) (01.09.2015)
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Conference Proceeding
Optimization of 1700V 4H-SiC JBS Diode Parameters
Bartolf, Holger, Mihaila, Andrei, Hazdra, Pavel, Sharma, Rupendra Kumar, Popelka, Stanislav
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
On the influence of active area design on the performance of SiC JBS diodes
Mihaila, A., Minamisawa, R. A., Knoll, L., Sundaramoorthy, V. K., Bianda, E., Bartolf, H., Alfieri, G., Rahimo, M.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Robust 3.3kV silicon carbide MOSFETs with surge and short circuit capability
Knoll, L., Mihaila, A., Bauer, F., Sundaramoorthy, V., Bianda, E., Minamisawa, R., Kranz, L., Bellini, M., Vemulapati, U., Bartolf, H., Kicin, S., Skibin, S., Papadopoulos, C., Rahimo, M.
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes
Rossmann, H.R., Bubendorf, A., Zanella, F., Marjanović, N., Schnieper, M., Meyer, E., Jung, T.A., Gobrecht, J., Minamisawa, R.A., Bartolf, H.
Published in Microelectronic engineering (01.09.2015)
Published in Microelectronic engineering (01.09.2015)
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Journal Article
Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
Zhang, A., Jung, T.A., Gysin, Urs, Meyer, Ernst, Bartolf, Holger, ROSSMANN, Harald, Schöner, Adolf, Bubendorf, Alexander, Reshanov, Sergey A., Glatzel, Thilo
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article