In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth
SINGISETTI, Uttam, WISTEY, Mark A, BO YU, YU YUAN, WANG, Dennis, TAUR, Yuan, ASBECK, Peter, LEE, Yong-Ju, BUREK, Gregory J, BARASKAR, Ashish K, THIBEAULT, Brian J, GOSSARD, Arthur C, RODWELL, Mark J. W, SHIN, Byungha, KIM, Eun J, MCINTYRE, Paul C
Published in IEEE electron device letters (01.11.2009)
Published in IEEE electron device letters (01.11.2009)
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Journal Article
Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node
Zhen Zhang, Koswatta, S. O., Bedell, S. W., Baraskar, A., Guillorn, M., Engelmann, S. U., Yu Zhu, Gonsalves, J., Pyzyna, A., Hopstaken, M., Witt, C., Li Yang, Fei Liu, Newbury, J., Wei Song, Cabral, C., Lofaro, M., Ozcan, A. S., Raymond, M., Lavoie, C., Sleight, J. W., Rodbell, K. P., Solomon, P. M.
Published in IEEE electron device letters (01.06.2013)
Published in IEEE electron device letters (01.06.2013)
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Journal Article
InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
Singisetti, Uttam, Wistey, Mark A., Burek, Gregory J., Arkun, Erdem, Baraskar, Ashish K., Sun, Yanning, Kiewra, Edward W., Thibeault, Brian J., Gossard, Arthur C., Palmstrøm, Chris J., Rodwell, Mark J. W.
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance
Jain, V., Rode, J. C., Han-Wei Chiang, Baraskar, A., Lobisser, E., Thibeault, B. J., Rodwell, M., Urteaga, M., Loubychev, D., Snyder, A., Wu, Y., Fastenau, J. M., Liu, W. K.
Published in 69th Device Research Conference (01.06.2011)
Published in 69th Device Research Conference (01.06.2011)
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Conference Proceeding
High doping effects on in-situ Ohmic contacts to n-InAs
Baraskar, Ashish, Jain, Vibhor, Wistey, Mark A, Singisetti, Uttam, Yong Ju Lee, Thibeault, Brian, Gossard, Arthur, Rodwell, Mark J W
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)
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Conference Proceeding
복수의 일함수 워드 라인들을 포함하는 3차원 메모리 디바이스 및 그 형성 방법
BARASKAR ASHISH, ZHANG PENG, ZHANG YANLI, ZHAO WEI, MOON DONG IL, MAKALA RAGHUVEER S
Year of Publication 06.07.2021
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Year of Publication 06.07.2021
Patent
Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond
Hashemi, Pouya, Balakrishnan, Karthik, Majumdar, Amlan, Khakifirooz, Ali, Wanki Kim, Baraskar, Ashish, Yang, Li A., Chan, Kevin, Engelmann, Sebastian U., Ott, John A., Antoniadis, Dimitri A., Leobandung, Effendi, Dae-Gyu Park
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f tau / f max similar to hbox 430 / 800 Unknown character hbox GHz
Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J, Rodwell, Mark JW, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K
Published in IEEE electron device letters (01.01.2011)
Published in IEEE electron device letters (01.01.2011)
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Journal Article
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz
JAIN, Vibhor, LOBISSER, Evan, FASTENAU, J. M, LIU, W. K, BARASKAR, Ashish, THIBEAULT, Brian J, RODWELL, Mark J. W, GRIFFITH, Z, URTEAGA, M, LOUBYCHEV, D, SNYDER, A, WU, Y
Published in IEEE electron device letters (2011)
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Published in IEEE electron device letters (2011)
Journal Article
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous [Formula Omitted]
Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J, Rodwell, Mark J. W, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J. M, Liu, W. K
Published in IEEE electron device letters (01.01.2011)
Published in IEEE electron device letters (01.01.2011)
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Journal Article
InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced C cb and increased RF cut‐off frequency
Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han‐Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.
Published in Physica status solidi. C (01.05.2013)
Published in Physica status solidi. C (01.05.2013)
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Journal Article
InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced C sub(c)band increased RF cut-off frequency
Lobisser, Evan, Rode, Johann C, Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J, Thibeault, Brian J, Rodwell, Mark JW, Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M, Liu, Amy WK
Published in Physica status solidi. C (01.05.2013)
Published in Physica status solidi. C (01.05.2013)
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Journal Article
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox
Jain, V, Lobisser, E, Baraskar, A, Thibeault, B J, Rodwell, M J W, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K
Published in IEEE electron device letters (01.01.2011)
Published in IEEE electron device letters (01.01.2011)
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Journal Article
Lower limits to specific contact resistivity
Baraskar, A., Gossard, A. C., Rodwell, M. J. W.
Published in 2012 International Conference on Indium Phosphide and Related Materials (01.08.2012)
Published in 2012 International Conference on Indium Phosphide and Related Materials (01.08.2012)
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Conference Proceeding
InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency
Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.
Published in Physica status solidi. C (01.05.2013)
Published in Physica status solidi. C (01.05.2013)
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