Search Results - "BARASKAR, Ashish" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

In0.53Ga0.47As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

by SINGISETTI, Uttam, WISTEY, Mark A, BO YU, YU YUAN, WANG, Dennis, TAUR, Yuan, ASBECK, Peter, LEE, Yong-Ju, BUREK, Gregory J, BARASKAR, Ashish K, THIBEAULT, Brian J, GOSSARD, Arthur C, RODWELL, Mark J. W, SHIN, Byungha, KIM, Eun J, MCINTYRE, Paul C
Published in IEEE electron device letters (01.11.2009)

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Journal Article

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

by Zhen Zhang, Koswatta, S. O., Bedell, S. W., Baraskar, A., Guillorn, M., Engelmann, S. U., Yu Zhu, Gonsalves, J., Pyzyna, A., Hopstaken, M., Witt, C., Li Yang, Fei Liu, Newbury, J., Wei Song, Cabral, C., Lofaro, M., Ozcan, A. S., Raymond, M., Lavoie, C., Sleight, J. W., Rodbell, K. P., Solomon, P. M.
Published in IEEE electron device letters (01.06.2013)

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Journal Article

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

by Singisetti, Uttam, Wistey, Mark A., Burek, Gregory J., Arkun, Erdem, Baraskar, Ashish K., Sun, Yanning, Kiewra, Edward W., Thibeault, Brian J., Gossard, Arthur C., Palmstrøm, Chris J., Rodwell, Mark J. W.
Published in Physica status solidi. C (01.06.2009)

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Journal Article

$1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance$

1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

by Jain, V., Rode, J. C., Han-Wei Chiang, Baraskar, A., Lobisser, E., Thibeault, B. J., Rodwell, M., Urteaga, M., Loubychev, D., Snyder, A., Wu, Y., Fastenau, J. M., Liu, W. K.
Published in 69th Device Research Conference (01.06.2011)

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Conference Proceeding

High doping effects on in-situ Ohmic contacts to n-InAs

High doping effects on in-situ Ohmic contacts to n-InAs

by Baraskar, Ashish, Jain, Vibhor, Wistey, Mark A, Singisetti, Uttam, Yong Ju Lee, Thibeault, Brian, Gossard, Arthur, Rodwell, Mark J W
Published in 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2010)

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Conference Proceeding

복수의 일함수 워드 라인들을 포함하는 3차원 메모리 디바이스 및 그 형성 방법

복수의 일함수 워드 라인들을 포함하는 3차원 메모리 디바이스 및 그 형성 방법

by BARASKAR ASHISH, ZHANG PENG, ZHANG YANLI, ZHAO WEI, MOON DONG IL, MAKALA RAGHUVEER S
Year of Publication 06.07.2021

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Patent

Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond

Strained Si1−xGex-on-insulator PMOS FinFETs with excellent sub-threshold leakage, extremely-high short-channel performance and source injection velocity for 10nm node and beyond

by Hashemi, Pouya, Balakrishnan, Karthik, Majumdar, Amlan, Khakifirooz, Ali, Wanki Kim, Baraskar, Ashish, Yang, Li A., Chan, Kevin, Engelmann, Sebastian U., Ott, John A., Antoniadis, Dimitri A., Leobandung, Effendi, Dae-Gyu Park
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)

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Conference Proceeding

$InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f tau / f max similar to hbox 430 / 800 Unknown character hbox GHz$

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f tau / f max similar to hbox 430 / 800 Unknown character hbox GHz

by Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J, Rodwell, Mark JW, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K
Published in IEEE electron device letters (01.01.2011)

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Journal Article

$InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz$

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz

by JAIN, Vibhor, LOBISSER, Evan, FASTENAU, J. M, LIU, W. K, BARASKAR, Ashish, THIBEAULT, Brian J, RODWELL, Mark J. W, GRIFFITH, Z, URTEAGA, M, LOUBYCHEV, D, SNYDER, A, WU, Y
Published in IEEE electron device letters (2011)

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Journal Article

$InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous [Formula Omitted]$

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous [Formula Omitted]

by Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J, Rodwell, Mark J. W, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J. M, Liu, W. K
Published in IEEE electron device letters (01.01.2011)

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Journal Article

InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced C cb and increased RF cut‐off frequency

InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced C cb and increased RF cut‐off frequency

by Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han‐Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.
Published in Physica status solidi. C (01.05.2013)

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Journal Article

REPROGRAMMING MEMORY CELLS TO TIGHTEN THRESHOLD VOLTAGE DISTRIBUTIONS AND IMPROVE DATA RETENTION

REPROGRAMMING MEMORY CELLS TO TIGHTEN THRESHOLD VOLTAGE DISTRIBUTIONS AND IMPROVE DATA RETENTION

by BARASKAR, Ashish, CHIN, Henry, CHEN, Han-Ping
Year of Publication 29.11.2023

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Patent

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced C sub(c)band increased RF cut-off frequency

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced C sub(c)band increased RF cut-off frequency

by Lobisser, Evan, Rode, Johann C, Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J, Thibeault, Brian J, Rodwell, Mark JW, Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M, Liu, Amy WK
Published in Physica status solidi. C (01.05.2013)

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Journal Article

Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same

Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same

by Rabkin, Peter, Baraskar, Ashish, Makala, Raghuveer S
Year of Publication 08.08.2023

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Patent

$InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox$

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox

by Jain, V, Lobisser, E, Baraskar, A, Thibeault, B J, Rodwell, M J W, Griffith, Z, Urteaga, M, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K
Published in IEEE electron device letters (01.01.2011)

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Journal Article

Lower limits to specific contact resistivity

Lower limits to specific contact resistivity

by Baraskar, A., Gossard, A. C., Rodwell, M. J. W.
Published in 2012 International Conference on Indium Phosphide and Related Materials (01.08.2012)

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Conference Proceeding

Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same

Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same

by Rabkin, Peter, Baraskar, Ashish, Makala, Raghuveer S
Year of Publication 27.12.2022

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Patent

Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same

Three-dimensional memory device containing III-V compound semiconductor channel and contacts and method of making the same

by Rabkin, Peter, Baraskar, Ashish, Makala, Raghuveer S
Year of Publication 22.11.2022

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Patent

Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same

Three-dimensional memory device with high mobility channels and nickel aluminum silicide or germanide drain contacts and method of making the same

by Rabkin, Peter, Baraskar, Ashish, Makala, Raghuveer S
Year of Publication 08.11.2022

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Patent

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency

InGaAs/InP DHBTs with emitter and base defined through electron-beam lithography for reduced Ccb and increased RF cut-off frequency

by Lobisser, Evan, Rode, Johann C., Jain, Vibhor, Chiang, Han-Wei, Baraskar, Ashish, Mitchell, William J., Thibeault, Brian J., Rodwell, Mark J. W., Urteaga, Miguel, Loubychev, Dmitri, Snyder, Andrew, Wu, Ying, Fastenau, Joel M., Liu, Amy W. K.
Published in Physica status solidi. C (01.05.2013)

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Journal Article

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