A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking
KIM, Jung-Sik, CHI SUNG OH, RYU, Jang-Woo, PARK, Kiwon, SANG KYU KANG, KIM, So-Young, KIM, Hoyoung, BANG, Jong-Min, CHO, Hyunyoon, JANG, Minsoo, HAN, Cheolmin, LEE, Jung-Bae, LEE, Hocheol, JOO SUN CHOI, JUN, Young-Hyun, LEE, Donghyuk, HYONG RYOL HWANG, HWANG, Sooman, NA, Byongwook, MOON, Joungwook, KIM, Jin-Guk, PARK, Hanna
Published in IEEE journal of solid-state circuits (2012)
Published in IEEE journal of solid-state circuits (2012)
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Conference Proceeding
Journal Article
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 \times 128 I/Os Using TSV Based Stacking
Kim, Jung-Sik, Oh, Chi Sung, Lee, Hocheol, Lee, Donghyuk, Hwang, Hyong Ryol, Hwang, Sooman, Moon, Joungwook, Kim, Jin-Guk, Park, Hanna, Ryu, Jang-Woo, Park, Kiwon, Kang, Sang Kyu, Kim, So-Young, Kim, Hoyoung, Bang, Jong-Min, Cho, Hyunyoon, Jang, Minsoo, Han, Cheolmin, LeeLee, Jung-Bae, Choi, Joo Sun, Jun, Young-Hyun
Published in IEEE journal of solid-state circuits (01.01.2012)
Published in IEEE journal of solid-state circuits (01.01.2012)
Get full text
Journal Article