Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
Imura, Masataka, Sugimura, Hiroki, Okada, Narihito, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira
Published in Journal of crystal growth (01.04.2008)
Published in Journal of crystal growth (01.04.2008)
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Journal Article
Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
Imura, Masataka, Nakano, Kiyotaka, Narita, Gou, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Conference Proceeding
Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
Imura, Masataka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Journal Article
Conference Proceeding
Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
Iida, Daisuke, Nagata, Kensuke, Makino, Takafumi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira, Udagawa, Takashi
Published in Applied physics express (25.07.2010)
Published in Applied physics express (25.07.2010)
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Journal Article
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
Balakrishnan, Krishnan, Bandoh, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
AlGaN/GaInN/GaN heterostructure field-effect transistor
Ikki, Hiromichi, Isobe, Yasuhiro, Iida, Daisuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi, Bandoh, Akira, Udagawa, Takashi
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
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Journal Article
Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices
IIDA, Kazuyoshi, KAWASHIMA, Takeshi, IWAYA, Motoaki, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu, BANDOH, Akira
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
Journal Article
AlGaN/GaN HFETs on Fe-doped GaN substrates
Oshimura, Yoshinori, Takeda, Kenichiro, Sugiyama, Takayuki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira, Udagawa, Takashi
Published in Physica status solidi. C (01.07.2010)
Published in Physica status solidi. C (01.07.2010)
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Journal Article
Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE
Nagamatsu, Kentaro, Okada, Narihito, Kato, Naofumi, Sumii, Takafumi, Bandoh, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Physica status solidi. C (01.07.2008)
Published in Physica status solidi. C (01.07.2008)
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Journal Article
High-quality 100/150 mm p-type 4H-SiC epitaxial wafer for high-voltage bipolar devices
Ishibashi, Naoto, Fukada, Keisuke, Bandoh, Akira, Momose, Kenji, Osawa, Hiroshi
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
Depth profile of doping concentration in thick (> 100 μm) and low-doped (14 cm−3) 4H-SiC epilayers
Fukada, Keisuke, Ishibashi, Naoto, Miyasaka, Yoshihiko, Bandoh, Akira, Momose, Kenji, Osawa, Hiroshi
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
Imura, Masataka, Nakano, Kiyotaka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira
Published in Japanese Journal of Applied Physics (01.11.2006)
Published in Japanese Journal of Applied Physics (01.11.2006)
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Journal Article
Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
Imura, Masataka, Nakano, Kiyotaka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
Epitaxial lateral overgrowth of Al x Ga 1− x N ( x>0.2) on sapphire and its application to UV-B-light-emitting devices
Iida, Kazuyoshi, Kawashima, Takeshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Journal Article
Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
Okada, Narihito, Fujimoto, Naoki, Kitano, Tsukasa, Narita, Gou, Imura, Masataka, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Shimono, Kenji, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article