Reduced damage generation in GaAs implanted with focused Be ions
BAMBA, Y, MIYAUCHI, E, ARIMOTO, H, TAKAMORI, A, HASHIMOTO, H
Published in Japanese Journal of Applied Physics (01.01.1984)
Published in Japanese Journal of Applied Physics (01.01.1984)
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Journal Article
Sn ion doping during GaAs MBE with field ion gun
BAMBA, Y, MIYAUCHI, E, KURAMOTO, K, TAKAMORI, A, FURUYA, T
Published in Japanese Journal of Applied Physics (01.01.1983)
Published in Japanese Journal of Applied Physics (01.01.1983)
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Journal Article
GaAs molecular beam epitaxy on Be implanted GaAs layers
TAKAMORI, A, MIYAUCHI, E, ARIMOTO, H, BAMBA, Y, HASHIMOTO, H
Published in Japanese Journal of Applied Physics (01.01.1983)
Published in Japanese Journal of Applied Physics (01.01.1983)
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Journal Article
Correlation between Si diffusion and Si-induced disordering in AlGaAs/GaAs superlattices
Nakashima, Hisao, Kobayashi, Junji, Fukunaga, Toshiaki, Matsui, Kazunori, Ishida, Kohji, Nakajima, Masato, Bamba, Yasuo, Ishida, Koichi
Published in Superlattices and microstructures (1986)
Published in Superlattices and microstructures (1986)
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Journal Article
Formation of n-Layer in In 0.53 Ga 0.47 As by Si Implantation
Kawata, Haruo, Nishi, Hidetoshi, Bamba, Yasuo, Sakurai, Teruo, Hashimoto, Hisao
Published in Japanese Journal of Applied Physics (01.07.1982)
Published in Japanese Journal of Applied Physics (01.07.1982)
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Journal Article