Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT
Kaushik, J K, Balakrishnan, V R, Panwar, B S, Muralidharan, R
Published in Semiconductor science and technology (01.01.2013)
Published in Semiconductor science and technology (01.01.2013)
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Two-dimensional analytical modelling of drain current collapse in AlGaN/GaN HEMTs using multi-phonon ionisation by an electric field
Gupta, Shradha, Kaushik, J K, Gupta, Ankur, Kumar, Vikram, Balakrishnan, V R
Published in Semiconductor science and technology (01.08.2020)
Published in Semiconductor science and technology (01.08.2020)
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Improved device performance based on crosslinking of poly (3-hexylthiophene)
Gaur, Manoj, Lohani, Jaya, Raman, R., Balakrishnan, V.R., Raghunathan, P., Eswaran, S.V.
Published in Synthetic metals (01.10.2010)
Published in Synthetic metals (01.10.2010)
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Electrical Studies on Pentacene Thin Film Transistors with Different Channel Widths
Lohani, Jaya, Gaur, Manoj, Kumar, Upendra, Balakrishnan, V. R, Harsh, Eswaran, S. V
Published in Chinese physics letters (01.04.2010)
Published in Chinese physics letters (01.04.2010)
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Journal Article
Carrier multiplication in nanoparticle PbSe/single crystal Si heterojunctions
Bhardwaj, Asha, Balakrishnan, V R, Srivastava, P, Sehgal, H K
Published in Semiconductor science and technology (01.09.2008)
Published in Semiconductor science and technology (01.09.2008)
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The origin of low-frequency negative transconductance dispersion in a pseudomorphic HEMT
Balakrishnan, V R, Kumar, Vikram, Ghosh, Subhasis
Published in Semiconductor science and technology (01.08.2005)
Published in Semiconductor science and technology (01.08.2005)
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Interlayer formation due to group V-hydride stabilization during interruptions of MOVPE growth of InGaP
Knauer, A, Krispin, P, Balakrishnan, V R, Kissel, H, Weyers, M
Published in Semiconductor science and technology (01.06.2004)
Published in Semiconductor science and technology (01.06.2004)
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Journal Article
Engineering Interface Composition for Passivation of HgCdTe Photodiodes
Pal, R., Malik, A., Srivastav, V., Sharma, B.L., Balakrishnan, V.R., Dhar, V., Vyas, H.P.
Published in IEEE transactions on electron devices (01.11.2006)
Published in IEEE transactions on electron devices (01.11.2006)
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Defect study of MOVPE-grown InGaP layers on GaAs
Knauer, A., Krispin, P., Balakrishnan, V.R., Weyers, M.
Published in Journal of crystal growth (01.12.2004)
Published in Journal of crystal growth (01.12.2004)
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Conference Proceeding
Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions
Knauer, A., Krispin, P., Balakrishnan, V.R., Weyers, M.
Published in Journal of crystal growth (01.02.2003)
Published in Journal of crystal growth (01.02.2003)
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Journal Article
Conference Proceeding
Determination of energetic distribution of interface states between gate metal and semiconductor in sub-micron devices from current-voltage characteristics
Dhar, S., Balakrishman, V.R., Kumar, V., Ghosh, S.
Published in IEEE transactions on electron devices (01.02.2000)
Published in IEEE transactions on electron devices (01.02.2000)
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Conductance deep-level transient spectroscopic study of anomalous hole trap in GaAs MESFETs
Balakrishnan, V R, Kumar, Vikram, Ghosh, Subhasis
Published in Semiconductor science and technology (01.10.1998)
Published in Semiconductor science and technology (01.10.1998)
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Experimental evidence of surface conduction contributing to transconductance dispersion in GaAs MESFETs
Balakrishnan, V.R., Kumar, V., Ghosh, S.
Published in IEEE transactions on electron devices (01.07.1997)
Published in IEEE transactions on electron devices (01.07.1997)
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Degradation process in organic thin film devices fabricated using P3HT
Rashmi, Kapoor, Ashok K, Kumar, Upendra, Balakrishnan, V R, Basu, P K
Published in Pramāṇa (01.03.2007)
Published in Pramāṇa (01.03.2007)
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Journal Article
Biaryl crosslinkers. I. Crosslinking of a bisazidobiaryl with poly(3-hexylthiophene)
Lohani, Jaya, Balakrishnan, V. R., Gaur, Manoj, Raghunathan, P., Eswaran, S. V.
Published in Canadian journal of chemistry (01.05.2011)
Published in Canadian journal of chemistry (01.05.2011)
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