Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs
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Conference Proceeding
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MOS-IGBT power devices for high-temperature operation in smart power SOI technology
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Conference Proceeding
Autonomous power supply for aeronautical health monitoring sensors
Bafleur, M, Boitier, V, Bramban, D, Dilhac, J-M, Dollat, X, Féau, J, Jugé, S
Published in Journal of physics. Conference series (01.07.2018)
Published in Journal of physics. Conference series (01.07.2018)
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Journal Article
Reliability of ESD protection devices designed in a 3D technology
Courivaud, B., Nolhier, N., Ferru, G., Bafleur, M., Caignet, F.
Published in Microelectronics and reliability (01.09.2014)
Published in Microelectronics and reliability (01.09.2014)
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Self-Powered Adaptive Switched Architecture Storage
Mahboubi, F. El, Bafleur, M., Boitier, V., Alvarez, A., Colomer, J., Miribel, P., Dilhac, J-M.
Published in Journal of physics. Conference series (01.11.2016)
Published in Journal of physics. Conference series (01.11.2016)
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Journal Article
Self-Powered energy harvester strain sensing device for structural health monitoring
Álvarez, A., Bafleur, M., Dilhac, J-M., Colomer, J., Dragomirescu, D., Lopez, J., Zhu, M., Miribel, P.
Published in Journal of physics. Conference series (01.11.2016)
Published in Journal of physics. Conference series (01.11.2016)
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Journal Article
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation
Monnereau, N., Caignet, F., Trémouilles, D., Nolhier, N., Bafleur, M.
Published in Microelectronics and reliability (01.02.2013)
Published in Microelectronics and reliability (01.02.2013)
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Journal Article
Powering a Commercial Datalogger by Energy Harvesting from Generated Aeroacoustic Noise
Monthéard, R, Airiau, C, Bafleur, M, Boitier, V, Dilhac, J-M, Dollat, X, Nolhier, N, Piot, E
Published in Journal of physics. Conference series (01.01.2014)
Published in Journal of physics. Conference series (01.01.2014)
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On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress
Caigneť, F., Nolhier, N., Bafleur, M., Wang, A., Mauran, N.
Published in Microelectronics and reliability (01.09.2013)
Published in Microelectronics and reliability (01.09.2013)
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Electrostatic discharge failure analysis of capacitive RF MEMS switches
Ruan, J., Nolhier, N., Bafleur, M., Bary, L., Coccetti, F., Lisec, T., Plana, R.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges
Luu, A., Miller, F., Poirot, P., Gaillard, R., Buard, N., Carriere, T., Austin, P., Bafleur, M., Sarrabayrouse, G.
Published in IEEE transactions on nuclear science (01.08.2008)
Published in IEEE transactions on nuclear science (01.08.2008)
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Journal Article
ESD failure signature in capacitive RF MEMS switches
Ruan, J., Papaioannou, G.J., Nolhier, N., Mauran, N., Bafleur, M., Coccetti, F., Plana, R.
Published in Microelectronics and reliability (01.08.2008)
Published in Microelectronics and reliability (01.08.2008)
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Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm
Bourgeat, J., Entringer, C., Galy, P., Bafleur, M., Marin-Cudraz, D.
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD)
Diatta, M., Bouyssou, E., Trémouilles, D., Martinez, P., Roqueta, F., Ory, O., Bafleur, M.
Published in Microelectronics and reliability (01.09.2009)
Published in Microelectronics and reliability (01.09.2009)
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Application of various optical techniques for ESD defect localization
Essely, F., Darracq, F., Pouget, V., Remmach, M., Beaudoin, F., Guitard, N., Bafleur, M., Perdu, P., Touboul, A., Lewis, D.
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency
Tremouilles, D., Bafleur, M., Bertrand, G., Nolhier, N., Mauran, N., Lescouzeres, L.
Published in IEEE journal of solid-state circuits (01.10.2004)
Published in IEEE journal of solid-state circuits (01.10.2004)
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Conference Proceeding
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology
Bertrand, G., Delage, C., Bafleur, M., Nolhier, N., Dorkel, J.-M., Nguyen, Q., Mauran, N., Tremouilles, D., Perdu, P.
Published in IEEE journal of solid-state circuits (01.09.2001)
Published in IEEE journal of solid-state circuits (01.09.2001)
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