22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme
Oh, Chi-Sung, Chun, Ki Chul, Byun, Young-Yong, Kim, Yong-Ki, Kim, So-Young, Ryu, Yesin, Park, Jaewon, Kim, Sinho, Cha, Sanguhn, Shin, Donghak, Lee, Jungyu, Son, Jong-Pil, Ho, Byung-Kyu, Cho, Seong-Jin, Kil, Beomyong, Ahn, Sungoh, Lim, Baekmin, Park, Yongsik, Lee, Kijun, Lee, Myung-Kyu, Baek, Seungduk, Noh, Junyong, Lee, Jae-Wook, Lee, Seungseob, Kim, Sooyoung, Lim, Botak, Choi, Seouk-Kyu, Kim, Jin-Guk, Choi, Hye-In, Kwon, Hyuk-Jun, Kong, Jun Jin, Sohn, Kyomin, Kim, Nam Sung, Park, Kwang-Il, Lee, Jung-Bae
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
Published in 2020 IEEE International Solid- State Circuits Conference - (ISSCC) (01.02.2020)
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