17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization
Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyuhong Kim, Hyo-Sig Won, Ja-Hum Ku, Paak, Sunhom Steve, Es Jung, Park, Steve Sungho, Kinam Kim
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
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