Ohmic contacts to Al‐rich AlGaN heterostructures
Douglas, E. A., Reza, S., Sanchez, C., Koleske, D., Allerman, A., Klein, B., Armstrong, A. M., Kaplar, R. J., Baca, A. G.
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
Published in Physica status solidi. A, Applications and materials science (01.08.2017)
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Journal Article
Stress relaxation and thermal evolution of film properties in amorphous carbon
Sullivan, J.P, Friedmann, T. A., Baca, A. G.
Published in Journal of electronic materials (01.09.1997)
Published in Journal of electronic materials (01.09.1997)
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Journal Article
Radiation Response of AlGaN-Channel HEMTs
Martinez, M. J., King, M. P., Baca, A. G., Allerman, A. A., Armstrong, A. A., Klein, B. A., Douglas, E. A., Kaplar, R. J., Swanson, S. E.
Published in IEEE transactions on nuclear science (01.01.2019)
Published in IEEE transactions on nuclear science (01.01.2019)
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Journal Article
Planar Ohmic Contacts to Al0.45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistors
Klein, B. A., Baca, A. G., Armstrong, A. M., Allerman, A. A., Sanchez, C. A., Douglas, E. A., Crawford, M. H., Miller, M. A., Kotula, P. G., Fortune, T. R., Abate, V. M.
Published in ECS journal of solid state science and technology (01.01.2017)
Published in ECS journal of solid state science and technology (01.01.2017)
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GaN electronics for high power, high temperature applications
Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cao, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., Abernathy, C.R., Han, J., Baca, A.G., Chyi, J.-I., Lee, C.-M., Nee, T.-E., Chuo, C.-C., Chu, S.N.G.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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Journal Article
Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths
Johnson, J W, Ren, F, Pearton, S J, Baca, A G, Han, J, Dabiran, A M, Chow, P P
Published in Journal of nanoscience and nanotechnology (01.06.2002)
Published in Journal of nanoscience and nanotechnology (01.06.2002)
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Journal Article
Epitaxially-grown GaN junction field effect transistors
Zhang, L., Lester, L.F., Baca, A.G., Shul, R.J., Chang, P.C., Willison, C.G., Mishra, U.K., Denbaars, S.P., Zolper, J.C.
Published in IEEE transactions on electron devices (01.03.2000)
Published in IEEE transactions on electron devices (01.03.2000)
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Journal Article
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Johnson, J.W, Baca, A.G, Briggs, R.D, Shul, R.J, Wendt, J.R, Monier, C, Ren, F, Pearton, S.J, Dabiran, A.M, Wowchack, A.M, Polley, C.J, Chow, P.P
Published in Solid-state electronics (01.12.2001)
Published in Solid-state electronics (01.12.2001)
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Journal Article
Inductively coupled high-density plasma-induced etch damage of GaN MESFETs
Shul, R.J, Zhang, L, Baca, A.G, Willison, C.G, Han, J, Pearton, S.J, Lee, K.P, Ren, F
Published in Solid-state electronics (2001)
Published in Solid-state electronics (2001)
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Journal Article
Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire
Johnson, J.W, Han, J, Baca, A.G, Briggs, R.D, Shul, R.J, Wendt, J.R, Monier, C, Ren, F, Luo, B, Chu, S.N.G, Tsvetkov, D, Dmitriev, V, Pearton, S.J
Published in Solid-state electronics (01.04.2002)
Published in Solid-state electronics (01.04.2002)
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Journal Article
Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor
Chang, P.C., Li, N.Y., Baca, A.G., Hou, H.Q., Monier, C., Laroche, J.R., Ren, F., Pearton, S.J.
Published in IEEE electron device letters (01.03.2001)
Published in IEEE electron device letters (01.03.2001)
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Journal Article
High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage
Chang, P.C, Monier, C, Baca, A.G, Li, N.Y, Newman, F, Armour, E, Hou, H.Q
Published in Solid-state electronics (01.04.2002)
Published in Solid-state electronics (01.04.2002)
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Journal Article
Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors
Baca, A.G., Monier, C., Chang, P.C., Briggs, R.D., Armendariz, M.G., Pearton, S.J.
Published in Solid-state electronics (01.06.2002)
Published in Solid-state electronics (01.06.2002)
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Journal Article
A survey of ohmic contacts to III-V compound semiconductors
Baca, A.G, Ren, F, Zolper, J.C, Briggs, R.D, Pearton, S.J
Published in Thin solid films (31.10.1997)
Published in Thin solid films (31.10.1997)
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Journal Article
Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown
Baca, A.G, Chang, P.C, Klem, J.F, Ashby, C.I.H, Martin, D.C
Published in Solid-state electronics (01.05.2001)
Published in Solid-state electronics (01.05.2001)
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Journal Article
Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors
LaRoche, J.R., Ren, F., Temple, D., Pearton, S.J., Kuo, J.M., Baca, A.G., Cheng, P., Park, Y.D., Hudspeth, Q., Hebard, A.F., Arnason, S.B.
Published in Solid-state electronics (01.12.2000)
Published in Solid-state electronics (01.12.2000)
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Journal Article
Enhanced high-frequency performance in a GaAs, self-aligned, n-JFET using a carbon buried p-implant
Zolper, J.C., Shenvin, M.E., Baca, A.G., Shul, R.J., Klem, J.F., Hietala, V.M.
Published in IEEE electron device letters (01.12.1994)
Published in IEEE electron device letters (01.12.1994)
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Journal Article
Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications
Monier, C, Chang, P.C, Li, N.Y, LaRoche, J.R, Baca, A.G, Hou, H.Q, Ren, F, Pearton, S.J
Published in Solid-state electronics (01.09.2000)
Published in Solid-state electronics (01.09.2000)
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