Growth and transport properties of relaxed epilayers of InAs on GaAs
PRZESŁAWSKI, T, WOLKENBERG, A, REGINSKI, K, KANIEWSKI, J, BAK-MISIUK, J
Published in Thin solid films (15.05.2000)
Published in Thin solid films (15.05.2000)
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MBE growth and characterization of InAs/GaAs for infrared detectors
Regiński, K., Kaniewski, J., Kosiel, K., Przesławski, T., Bąk-Misiuk, J.
Published in Physica status solidi. C (01.02.2004)
Published in Physica status solidi. C (01.02.2004)
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Effect of annealing atmosphere on the quality of ZnO crystal surface
Grasza, K., Łusakowska, E., Skupiński, P., Kopalko, K., Bąk-Misiuk, J., Mycielski, A.
Published in Physica Status Solidi (b) (01.05.2007)
Published in Physica Status Solidi (b) (01.05.2007)
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Conference Proceeding
Structural and magnetic properties of nanoclusters in GaMnAs granular layers
Lawniczak-Jablonska, K., Bak-Misiuk, J., Dynowska, E., Romanowski, P., Domagala, J.Z., Libera, J., Wolska, A., Klepka, M.T., Dluzewski, P., Sadowski, J., Barcz, A., Wasik, D., Twardowski, A., Kwiatkowski, A.
Published in Journal of solid state chemistry (01.06.2011)
Published in Journal of solid state chemistry (01.06.2011)
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Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers
Lawniczak-Jablonska, K., Libera, J., Wolska, A., Klepka, M. T., Dluzewski, P., Bak-Misiuk, J., Dynowska, E., Romanowski, P., Domagala, J. Z., Sadowski, J., Barcz, A., Wasik, D., Twardowski, A., Kwiatkowski, A.
Published in Physica Status Solidi (b) (01.07.2011)
Published in Physica Status Solidi (b) (01.07.2011)
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Structural perfection of InGaN layers and its relation to photoluminescence
Liliental-Weber, Z., Yu, K. M., Hawkridge, M., Bedair, S., Berman, A.E., Emara, A., Khanal, D. R., Wu, J., Domagala, J., Bak-Misiuk, J.
Published in Physica status solidi. C (01.12.2009)
Published in Physica status solidi. C (01.12.2009)
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Structural defects and cathodoluminescence of InxGa1-xN layers
Liliental-Weber, Z., Ogletree, D. F., Yu, K. M., Hawkridge, M., Domagala, J. Z., Bak-Misiuk, J., Berman, A. E., Emara, A., Bedair, S.
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
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X-ray characterisation of a bulk ZnO crystal
Shalimov, A., Paszkowicz, W., Grasza, K., Skupiński, P., Mycielski, A., Bak-Misiuk, J.
Published in Physica Status Solidi (b) (01.05.2007)
Published in Physica Status Solidi (b) (01.05.2007)
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Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γIrradiation and High Temperature-High Pressure Treatment
Wieteska, K., Misiuk, A., Prujszczyk, M., Wierzchowski, W., Surma, B., Bąk-Misiuk, J., Romanowski, P., Shalimov, A., Capan, I., Yang, D., Graeff, W.
Published in Acta physica Polonica, A (01.08.2008)
Published in Acta physica Polonica, A (01.08.2008)
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Structural properties of (Ga,Mn)Sb thin films on GaAs(111)A substrate
Bak-Misiuk, J., Romanowski, P., Sadowski, J., Wojciechowski, T., Dynowska, E., Domagala, J. Z., Caliebe, W.
Published in Physica status solidi. C (01.12.2009)
Published in Physica status solidi. C (01.12.2009)
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Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon
Misiuk, A, Bąk-Misiuk, J, Barcz, A, Romano-Rodriguez, A, Antonova, I.V, Popov, V.P, Londos, C.A, Jun, J
Published in International journal of hydrogen energy (01.05.2001)
Published in International journal of hydrogen energy (01.05.2001)
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Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies
LILIENTAL-WEBER, Z, BENAMARA, M, WASHBURN, J, DOMAGALA, J. Z, BAK-MISIUK, J, PINER, E. L, ROBERTS, J. C, BEDAIR, S. M
Published in Journal of electronic materials (01.04.2001)
Published in Journal of electronic materials (01.04.2001)
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Structural properties of MBE grown GaMnAs layers
SADOWSKI, J, DOMAGAŁA, J. Z, BAK-MISIUK, J, KOLESNIK, S, SWIATEK, K, KANSKI, J, ILVER, L
Published in Thin solid films (15.05.2000)
Published in Thin solid films (15.05.2000)
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Parameters of substrates-single crystals of ZnTe and Cd1-xZnxTe (x < 0.25), obtained by physical vapor transport technique (PVT)
MYCIELSKI, A, SZADKOWSKI, A, ŁUSAKOWSKA, E, KOWALCZYK, L, DOMAGAŁA, J, BAK-MISIUK, J, WILAMOWSKI, Z
Published in Journal of crystal growth (01.02.1999)
Published in Journal of crystal growth (01.02.1999)
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Effect of stress on structural transformations in GaMnAs
Bak-Misiuk, J, Romanowski, P, Misiuk, A, Sadowski, J, Jakiela, R, Barcz, A
Published in Journal of nanoscience and nanotechnology (01.11.2012)
Published in Journal of nanoscience and nanotechnology (01.11.2012)
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Pressure assisted evolution of defects in silicon
Londos, C. A., Potsidi, M. S., Bak-Misiuk, J., Misiuk, A., Emtsev, V. V.
Published in Crystal research and technology (1979) (01.12.2003)
Published in Crystal research and technology (1979) (01.12.2003)
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Structure of Oxygen - Implanted Silicon Single Crystals Treated at ≥1400 K under High Argon Pressure
Misiuk, A., Barcz, A., Ratajczak, J., Katcki, J., Bak-Misiuk, J., Bryja, L., Surma, B., Gawlik, G.
Published in Crystal research and technology (1979) (01.10.2001)
Published in Crystal research and technology (1979) (01.10.2001)
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Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire
Leszczynski, M, Prystawko, P, Suski, T, Lucznik, B, Domagala, J, Bak-Misiuk, J, Stonert, A, Turos, A, Langer, R, Barski, A
Published in Journal of alloys and compounds (05.05.1999)
Published in Journal of alloys and compounds (05.05.1999)
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Conference Proceeding
Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)
Wolkenberg, A, Przesławski, T, Kaniewski, J, Bąk-Misiuk, J, Regiński, K
Published in Materials science & engineering. B, Solid-state materials for advanced technology (29.09.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (29.09.2000)
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