Author Correction: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
Fuchs, C., Brüggemann, A., Weseloh, M. J., Berger, C., Möller, C., Reinhard, S., Hader, J., Moloney, J. V., Bäumner, A., Koch, S. W., Stolz, W.
Published in Scientific reports (15.05.2018)
Published in Scientific reports (15.05.2018)
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Journal Article
High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm
Fuchs, C., Brüggemann, A., Weseloh, M. J., Berger, C., Möller, C., Reinhard, S., Hader, J., Moloney, J. V., Bäumner, A., Koch, S. W., Stolz, W.
Published in Scientific reports (23.01.2018)
Published in Scientific reports (23.01.2018)
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Luminescence properties of dilute bismide systems
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Published in Journal of luminescence (01.10.2014)
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Analysis of in-well pumping of semiconductor lasers by microscopic gain calculations
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Published in CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference (01.06.2009)
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Published in Journal of agricultural and food chemistry (01.09.1998)
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Low-Threshold Operation of GaAs-Based (GaIn)As/Ga(AsSb)/(GaIn)As ,,W"-Quantum Well Lasers Emitting at 1.3 μm
Fuchs, C., Ludewig, P., Bruggemann, A., Perez, A. Ruiz, Weseloh, M. J., Reinhard, S., Hader, J., Moloney, J. V., Baumner, A., Koch, S. W., Stolz, W.
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Published in 2018 IEEE International Semiconductor Laser Conference (ISLC) (01.09.2018)
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Conference Proceeding