Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys
Aydaraliev, M, Zotova, N V, Karandashov, S A, Matveev, B A, Stus', N M, Talalakin, G N
Published in Semiconductor science and technology (01.08.1993)
Published in Semiconductor science and technology (01.08.1993)
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Journal Article
High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm)
Aydaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2001)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2001)
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Journal Article
Radiation recombination in InAsSb/InAsSbP double heterostructures
Aydaraliev, M, Bresler, M S, Gusev, O B, Karandashov, S A, Matveev, B A, Stus, M N, Talalakin, G N, Zotova, N V
Published in Semiconductor science and technology (01.02.1995)
Published in Semiconductor science and technology (01.02.1995)
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Journal Article
InAs-based laser double heterostructures with p-n junction in the active region
Bresler, M.S., Gusev, O.B., Zotova, N.V., Aydaraliev, M., Karandashev, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.
Published in Optical materials (01.07.1996)
Published in Optical materials (01.07.1996)
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