Search Results - "Aubin, Joris" :: K.UTB vyhledávací portál

GeSn heterostructure micro-disk laser operating at 230 K

by Thai, Quang Minh, Pauc, Nicolas, Aubin, Joris, Bertrand, Mathieu, Chrétien, Jérémie, Delaye, Vincent, Chelnokov, Alexei, Hartmann, Jean-Michel, Reboud, Vincent, Calvo, Vincent
Published in Optics express (10.12.2018)

Get full text

Journal Article

Loading…

Multilayered highly-active dopant distribution by UV nanosecond melt laser annealing in Ga and B co-implanted high Ge content SiGe:B epilayers

by Tabata, Toshiyuki, Aubin, Joris, Mazzamuto, Fulvio
Published in Japanese Journal of Applied Physics (01.05.2020)

Get full text

Journal Article

Loading…

Solid phase recrystallization induced by multi-pulse nanosecond laser annealing

by Acosta Alba, Pablo, Aubin, Joris, Perrot, Sylvain, Mazzamuto, Fulvio, Grenier, Adeline, Kerdilès, Sébastien
Published in Applied surface science advances (01.03.2021)

Get full text

Journal Article

Loading…

A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe

by Hartmann, Jean-Michel, Aubin, Joris, Barnes, Jean-Paul
Published in ECS transactions (18.08.2016)

Get full text

Journal Article

Loading…

$Ni/GeSn solid‐state reaction monitored by combined X‐ray diffraction analyses: focus on the Ni‐rich phase$

Ni/GeSn solid‐state reaction monitored by combined X‐ray diffraction analyses: focus on the Ni‐rich phase

by Quintero, Andrea, Gergaud, Patrice, Aubin, Joris, Hartmann, Jean-Michel, Reboud, Vincent, Rodriguez, Philippe
Published in Journal of applied crystallography (01.08.2018)

Get full text

Journal Article

Loading…

Progress in Germanium Tin (GeSn) Photonic Crystal Lasers

by Thai, Quang Minh, Chretien, Jeremie, Bertrand, Mathieu, Aubin, Joris, Casiez, Lara, Chelnokov, Alexei, Hartmann, Jean-Michel, Reboud, Vincent, Pauc, Nicolas, Calvo, Vincent
Published in IEEE journal of selected topics in quantum electronics (01.01.2022)

Get full text

Journal Article

Loading…

Growth and characterization of SiGeSn pseudomorphic layers on 200 mm Ge virtual substrates

by Khazaka, Rami, Nolot, Emmanuel, Aubin, Joris, Hartmann, Jean-Michel
Published in Semiconductor science and technology (07.11.2018)

Get full text

Journal Article

Loading…

Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si 2 H 6 Flows

by Khazaka, Rami, Aubin, Joris, Nolot, Emmanuel, Hartmann, Jean-Michel
Published in ECS transactions (20.07.2018)

Get full text

Journal Article

Loading…

Experimental Calibration of Sn‐Related Varshni Parameters for High Sn Content GeSn Layers

by Bertrand, Mathieu, Thai, Quang‐Minh, Chrétien, Jérémie, Pauc, Nicolas, Aubin, Joris, Milord, Laurent, Gassenq, Alban, Hartmann, Jean‐Michel, Chelnokov, Alexei, Calvo, Vincent, Reboud, Vincent
Published in Annalen der Physik (01.06.2019)

Get full text

Journal Article

Loading…

Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows

by Khazaka, Rami, Aubin, Joris, Nolot, Emmanuel, Hartmann, Jean-Michel
Published in ECS transactions (01.01.2018)

Get full text

Journal Article

Loading…

Comparative Analysis of Ni- and Ni 0.9 Pt 0.1 -Ge 0.9 Sn 0.1 Solid-State Reaction by Combined Characterizations Methods

by Quintero, Andrea, Gergaud, Patrice, Aubin, Joris, Hartmann, Jean-Michel, Chevalier, Nicolas, Reboud, Vincent, Cassan, Eric, Rodriguez, Philippe
Published in ECS transactions (20.07.2018)

Get full text

Journal Article

Loading…

(Invited) Laser Thermal Annealing for Low Thermal Budget Applications: From Contact Formation to Material Modification

by Huet, Karim, Tabata, Toshiyuki, Aubin, Joris, Rozé, Fabien, Thuries, Louis, Halty, Sebastien, Curvers, Benoit, Mazzamuto, Fulvio, Liu, J., Mori, Yoshihiro
Published in ECS transactions (23.04.2019)

Get full text

Journal Article

Loading…

Investigation of the Low Temperature / High Temperature Approach to Produce Si0.5Ge0.5 and Pure Ge Strain Relaxed Buffers

by Hartmann, Jean-Michel, Aubin, Joris, Bogumilowicz, Yann, Delaye, Vincent, Papon, Anne-Marie
Published in ECS transactions (18.08.2016)

Get full text

Journal Article

Loading…

Investigation of the Low Temperature / High Temperature Approach to Produce Si 0.5 Ge 0.5 and Pure Ge Strain Relaxed Buffers

by Hartmann, Jean-Michel, Aubin, Joris, Bogumilowicz, Yann, Delaye, Vincent, Papon, Anne-Marie
Published in ECS transactions (18.08.2016)

Get full text

Journal Article

Loading…

Composition and Strain Evolution of Undoped Si 0.8 Ge 0.2 Layers Submitted to UV-Nanosecond Laser Annealing

by Dagault, Lea, Acosta-Alba, Pablo, Kerdilès, Sébastien, Barnes, Jean-Paul, Hartmann, Jean-Michel, Gergaud, Patrice, Nguyen, Than Tra, Grenier, Adeline, Aubin, Joris, Cristiano, Fuccio
Published in ECS transactions (20.07.2018)

Get full text

Journal Article

Loading…

Very Low Temperature Epitaxy of Heavily In-situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

by Aubin, Joris, Hartmann, Jean-Michel, Barnes, Jean-Paul, Pin, Jean-Baptiste, Bauer, Matthias
Published in ECS transactions (18.08.2016)

Get full text

Journal Article

Loading…

Comparative Analysis of Ni- and Ni0.9Pt0.1-Ge0.9Sn0.1 Solid-State Reaction by Combined Characterizations Methods

by Quintero, Andrea, Gergaud, Patrice, Aubin, Joris, Hartmann, Jean-Michel, Chevalier, Nicolas, Reboud, Vincent, Cassan, Eric, Rodriguez, Philippe
Published in ECS transactions (01.01.2018)

Get full text

Journal Article

Loading…

Impact of Wet Treatments on the Electrical Performance of Ge0.9Sn0.1-Based p‑MOS Capacitors

by Mahjoub, Mohamed Aymen, Haffner, Thibault, Labau, Sébastien, Eustache, Etienne, Aubin, Joris, Hartmann, Jean-Michel, Ghibaudo, Gérard, Pelissier, Bernard, Bassani, Franck, Salem, Bassem
Published in ACS applied electronic materials (26.02.2019)

Get full text

Journal Article

Loading…

Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing

by Dagault, Lea, Acosta-Alba, Pablo, Kerdilès, Sébastien, Barnes, Jean-Paul, Hartmann, Jean-Michel, Gergaud, Patrice, Nguyen, Than Tra, Grenier, Adeline, Aubin, Joris, Cristiano, Fuccio
Published in ECS transactions (20.07.2018)

Get full text

Journal Article

Loading…

Impact of Wet Treatments on the Electrical Performance of Ge 0.9 Sn 0.1 -Based p-MOS Capacitors

by Mahjoub, Mohamed Aymen, Haffner, Thibault, Labau, Sébastien, Eustache, Etienne, Aubin, Joris, Hartmann, Jean-Michel, Ghibaudo, Gérard, Pelissier, Bernard, Bassani, Franck, Salem, Bassem
Published in ACS applied electronic materials (26.02.2019)

Get full text

Journal Article

Refine Results

Format

Subject Area

Topic

Language

Year of Publication

Database