Electrically Controlled All‐Antiferromagnetic Tunnel Junctions on Silicon with Large Room‐Temperature Magnetoresistance
Shi, Jiacheng, Arpaci, Sevdenur, Lopez‐Dominguez, Victor, Sangwan, Vinod K., Mahfouzi, Farzad, Kim, Jinwoong, Athas, Jordan G., Hamdi, Mohammad, Aygen, Can, Arava, Hanu, Phatak, Charudatta, Carpentieri, Mario, Jiang, Jidong S., Grayson, Matthew A., Kioussis, Nicholas, Finocchio, Giovanni, Hersam, Mark C., Khalili Amiri, Pedram
Published in Advanced materials (Weinheim) (01.06.2024)
Published in Advanced materials (Weinheim) (01.06.2024)
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All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Shi, Jiacheng, Lopez-Dominguez, Victor, Arpaci, Sevdenur, Sangwan, Vinod K, Mahfouzi, Farzad, Kim, Jinwoong, Athas, Jordan G, Hamdi, Mohammad, Aygen, Can, Phatak, Charudatta, Carpentieri, Mario, Jiang, Jidong S, Grayson, Matthew A, Kioussis, Nicholas, Finocchio, Giovanni, Hersam, Mark C, Amiri, Pedram Khalili
Year of Publication 23.11.2023
Year of Publication 23.11.2023
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Journal Article
All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Shi, Jiacheng, Lopez-Dominguez, Victor, Arpaci, Sevdenur, Sangwan, Vinod K, Mahfouzi, Farzad, Kim, Jinwoong, Athas, Jordan G, Hamdi, Mohammad, Aygen, Can, Phatak, Charudatta, Carpentieri, Mario, Jiang, Jidong S, Grayson, Matthew A, Kioussis, Nicholas, Finocchio, Giovanni, Hersam, Mark C, Pedram Khalili Amiri
Published in arXiv.org (23.11.2023)
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Published in arXiv.org (23.11.2023)
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