A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
Kanda, Kazushige, Koyanagi, Masaru, Yamamura, Toshio, Hosono, Koji, Yoshihara, Masahiro, Miwa, Toru, Kato, Yosuke, Mak, Alex, Chan, Siu Lung, Tsai, Frank, Cernea, Raul, Le, Binh, Makino, Eiichi, Taira, Takashi, Otake, Hiroyuki, Kajimura, Norifumi, Fujimura, Susumu, Takeuchi, Yoshiaki, Itoh, Mikihiko, Shirakawa, Masanobu, Nakamura, Dai, Suzuki, Yuya, Okukawa, Yuki, Kojima, Masatsugu, Yoneya, Kazuhide, Arizono, Takamichi, Hisada, Toshiki, Miyamoto, Shinji, Noguchi, Mitsuhiro, Yaegashi, Toshitake, Higashitani, Masaaki, Ito, Fumitoshi, Kamei, Teruhiko, Hemink, Gertjan, Maruyama, Tooru, Ino, Kazumi, Ohshima, Shigeo
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
Get full text
Conference Proceeding