Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Zhao, Hongping, Liu, Guangyu, Arif, Ronald A., Tansu, Nelson
Published in Solid-state electronics (01.10.2010)
Published in Solid-state electronics (01.10.2010)
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Journal Article
Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures
Ee, Yik-Khoon, Kumnorkaew, Pisist, Arif, Ronald A, Tong, Hua, Gilchrist, James F, Tansu, Nelson
Published in Optics express (03.08.2009)
Published in Optics express (03.08.2009)
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Journal Article
Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
Arif, R.A., Hongping Zhao, Yik-Khoon Ee, Tansu, N.
Published in IEEE journal of quantum electronics (01.06.2008)
Published in IEEE journal of quantum electronics (01.06.2008)
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Journal Article
Analysis of Internal Quantum Efficiency and Current Injection Efficiency in III-Nitride Light-Emitting Diodes
Hongping Zhao, Guangyu Liu, Jing Zhang, Arif, R. A., Tansu, N.
Published in Journal of display technology (01.04.2013)
Published in Journal of display technology (01.04.2013)
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Journal Article
Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates
Su, Jie, Posthuma, Niels, Wellekens, Dirk, Saripalli, Yoga N., Decoutere, Stefaan, Arif, Ronald, Papasouliotis, George D.
Published in Journal of electronic materials (01.12.2016)
Published in Journal of electronic materials (01.12.2016)
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Journal Article
Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm
Zhao, Hongping, Arif, Ronald A., Ee, Yik-Khoon, Tansu, Nelson
Published in Optical and quantum electronics (01.04.2008)
Published in Optical and quantum electronics (01.04.2008)
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Journal Article
Conference Proceeding
(Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor
Papasouliotis, George D, Su, Jie, Krishnan, Balakrishnan, Arif, Ronald
Published in ECS transactions (21.09.2015)
Published in ECS transactions (21.09.2015)
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Journal Article
Nanostructure engineering of staggered InGaN quantum wells light emitting diodes emitting at 420-510 nm
Arif, Ronald A., Ee, Yik-Khoon, Tansu, Nelson
Published in Physica status solidi. A, Applications and materials science (01.01.2008)
Published in Physica status solidi. A, Applications and materials science (01.01.2008)
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Journal Article
Conference Proceeding
Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor
Lu, Jing, Su, Jie, Arif, Ronald, Papasouliotis, George D., Paranjpe, Ajit
Published in MRS advances (01.01.2017)
Published in MRS advances (01.01.2017)
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Journal Article
Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm
Hongping Zhao, Arif, R.A., Tansu, N.
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
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Journal Article
Uniform growth of III-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor
Su, Jie, Armour, Eric, Lee, Soo Min, Arif, Ronald, Papasouliotis, George D.
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
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Journal Article
Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses
Yik-Khoon Ee, Kumnorkaew, P., Arif, R.A., Hua Tong, Hongping Zhao, Gilchrist, J.F., Tansu, N.
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
Published in IEEE journal of selected topics in quantum electronics (01.07.2009)
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Journal Article
Uniform growth of III-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor: Uniform growth of III-nitrides on 200 mm silicon substrates
Su, Jie, Armour, Eric, Lee, Soo Min, Arif, Ronald, Papasouliotis, George D.
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
Published in Physica status solidi. A, Applications and materials science (01.04.2016)
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Journal Article
Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metalorganic vapor-phase epitaxy
Ee, Yik-Khoon, Zhao, Hongping, Arif, Ronald A., Jamil, Muhammad, Tansu, Nelson
Published in Journal of crystal growth (01.04.2008)
Published in Journal of crystal growth (01.04.2008)
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Journal Article
Confocal Microscopy and TRPL Spectroscopy Study on Spatial Variation of PL in Blue-Emitting InGaN/GaN MQWs
Li, Cheng, Stokes, E. B., Hefti, Ryan, Moyer, Patrick J, Arif, Ronald A, Byrnes, Dan, Lee, Soo Min, Armour, Eric
Published in ECS transactions (01.01.2013)
Published in ECS transactions (01.01.2013)
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Journal Article
Spontaneous Radiative Efficiency and Gain Characteristics of Strained-Layer InGaAs-GaAs Quantum-Well Lasers
Tsvid, G., Kirch, J., Mawst, L.J., Kanskar, M., Cai, J., Arif, R.A., Tansu, N., Smowton, P.M., Blood, P.
Published in IEEE journal of quantum electronics (01.08.2008)
Published in IEEE journal of quantum electronics (01.08.2008)
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Journal Article