High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy
Xenogiannopoulou, E, Tsipas, P, Aretouli, K E, Tsoutsou, D, Giamini, S A, Bazioti, C, Dimitrakopulos, G P, Komninou, Ph, Brems, S, Huyghebaert, C, Radu, I P, Dimoulas, A
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Published in Nanoscale (07.05.2015)
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Published in Schizophrenia research (01.03.2012)
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Published in The Journal of Frailty & Aging (2023)
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Published in ACS applied materials & interfaces (27.01.2016)
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Published in Microelectronic engineering (01.04.2009)
Published in Microelectronic engineering (01.04.2009)
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Pita, R., Aretouli, E., Loukopoulou, E., Parissis, D., Ioannides, P., Karakostas, D.
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Published in Neurocase (01.06.2005)
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Published in European neuropsychopharmacology (01.11.2020)
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Published in Dialogues in Clinical Neuroscience & Mental Health (Online) (01.10.2018)
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Published in Dialogues in Clinical Neuroscience & Mental Health (Online) (01.10.2018)
Published in Dialogues in Clinical Neuroscience & Mental Health (Online) (01.10.2018)
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Published in Microelectronic engineering (01.11.2015)
Published in Microelectronic engineering (01.11.2015)
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Published in Archives of clinical neuropsychology (01.08.2007)
Published in Archives of clinical neuropsychology (01.08.2007)
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Epitaxial 2D MoSe 2 (HfSe 2 ) Semiconductor/2D TaSe 2 Metal van der Waals Heterostructures
Tsoutsou, Dimitra, Aretouli, Kleopatra E., Tsipas, Polychronis, Marquez-Velasco, Jose, Xenogiannopoulou, Evangelia, Kelaidis, Nikolaos, Aminalragia Giamini, Sigiava, Dimoulas, Athanasios
Published in ACS applied materials & interfaces (27.01.2016)
Published in ACS applied materials & interfaces (27.01.2016)
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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxyElectronic supplementary information (ESI) available: crystal structure of MoSe2; large area STM images of 3 ML MoSe2/AlN; large area optical and SEM images of MoSe2 films on AlN; GPA lattice strain analysis map of 3 ML MoSe2 deposited on AlN; band diagram reconstruction of MoSe2/AlN and MoSe2/Bi2Se3/AlN; short-scale uniformity investigation of 1 ML MoSe2 on AlN(0001); stabil
Xenogiannopoulou, E, Tsipas, P, Aretouli, K. E, Tsoutsou, D, Giamini, S. A, Bazioti, C, Dimitrakopulos, G. P, Komninou, Ph, Brems, S, Huyghebaert, C, Radu, I. P, Dimoulas, A
Year of Publication 24.04.2015
Year of Publication 24.04.2015
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Journal Article
High-quality, large-area MoSe 2 and MoSe 2 /Bi 2 Se 3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy
Xenogiannopoulou, E., Tsipas, P., Aretouli, K. E., Tsoutsou, D., Giamini, S. A., Bazioti, C., Dimitrakopulos, G. P., Komninou, Ph, Brems, S., Huyghebaert, C., Radu, I. P., Dimoulas, A.
Published in Nanoscale (2015)
Published in Nanoscale (2015)
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Negative Quantum Capacitance Effects in Metal-Insulator-Semiconductor Devices with Composite Graphene-Encapsulated Gates
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Published in Advanced electronic materials (01.04.2016)
Published in Advanced electronic materials (01.04.2016)
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