A New Direction for III–V FETs for Mobile CPU Operation Including Burst-Mode: In 0.35 Ga 0.65 As Channel
Rakshit, T., Obradovic, B., Wang, W.-E., Kim, W.-H., Shin, K.-M., Baek, S.-C., Lee, S.-W., Kim, S.-H., Lee, J.-M., Kim, D., Hoover, A., Song, W.-B., Cantoro, M., Heo, Y.-C., Rooyackers, R., Ardila, S. C., Vais, A., Lin, D., Collaert, N., Rodder, M. S.
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
Get full text
Journal Article
A New Direction for III-V FETs for Mobile CPU Operation Including Burst-Mode: In0.35Ga0.65As Channel
Rakshit, T., Obradovic, B., Wang, W.-E, Kim, W.-H, Shin, K.-M, Baek, S.-C, Lee, S.-W, Kim, S.-H, Lee, J.-M, Kim, D., Hoover, A., Song, W.-B, Cantoro, M., Heo, Y.-C, Rooyackers, R., Ardila, S. C., Vais, A., Lin, D., Collaert, N., Rodder, M. S.
Published in IEEE electron device letters (01.03.2017)
Published in IEEE electron device letters (01.03.2017)
Get full text
Journal Article