A new and simple model for GaAs heterojunction FET gate characteristics
Chen, C.-H., Baier, S.M., Arch, D.K., Shur, M.S.
Published in IEEE transactions on electron devices (01.05.1988)
Published in IEEE transactions on electron devices (01.05.1988)
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Journal Article
New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation
Shur, M.S., Arch, D.K., Daniels, R.R., Abrokwah, J.K.
Published in IEEE electron device letters (01.02.1986)
Published in IEEE electron device letters (01.02.1986)
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Journal Article
High-performance self-aligned gate (Al,Ga)As/GaAs MODFET's on MBE Layers grown on
Arch, D.K., Morkoc, H., Vold, P.J., Longerbone, M.
Published in IEEE electron device letters (01.11.1986)
Published in IEEE electron device letters (01.11.1986)
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Journal Article
0.5- mu m gate length self-aligned gate MODFET with reduced short-channel effects
Han, C.J., Grider, D., Newstrom, K., Joslyn, P., Fraasch, A., Arch, D.K.
Published in IEEE transactions on electron devices (01.12.1988)
Published in IEEE transactions on electron devices (01.12.1988)
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Journal Article
Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors
Ruden, P.P., Shur, M., Arch, D.K., Daniels, R.R., Grider, D.E., Nohava, T.E.
Published in IEEE transactions on electron devices (01.11.1989)
Published in IEEE transactions on electron devices (01.11.1989)
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Journal Article
A 500-MHz 1616 complex multiplier using self-aligned gate GaAs heterostructure FET technology
Akinwande, A.I., MacTaggart, I.R., Betz, B.K., Grider, D.E., Lange, T.H., Nohava, J.C., Tetzlaff, D.E., Arch, D.K.
Published in IEEE journal of solid-state circuits (01.10.1989)
Published in IEEE journal of solid-state circuits (01.10.1989)
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Journal Article
VA-7 ionizing radiation response of GaAs heterostructure technologies
Listvan, M.A., Vold, P.J., Arch, D.K.
Published in IEEE transactions on electron devices (01.11.1987)
Published in IEEE transactions on electron devices (01.11.1987)
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Journal Article
IIA-1 improved MODFET performance through gate current control
Ruden, P.P., Han, C.J., Chen, C.H., Baier, S., Arch, D.K.
Published in IEEE transactions on electron devices (01.11.1987)
Published in IEEE transactions on electron devices (01.11.1987)
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Journal Article
A self-aligned gate superlattice (Al,GA)As/n+-GaAs MODFET 5 × 5-bit parallel multiplier
Arch, D.K., Betz, B.K., Vold, P.J., Abrokwah, J.K., Cirillo, N.C.
Published in IEEE electron device letters (01.12.1986)
Published in IEEE electron device letters (01.12.1986)
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Journal Article
Thin-film-edge emitter field emitter arrays for avionics display backlight applications
Akinwande, A.I., Johnson, B.R., Holmen, J.O., Murphy, D.P., Arch, D.K.
Published in IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology (1995)
Published in IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology (1995)
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Conference Proceeding
Thin-film-edge emitter vacuum microelectronics devices for lamp/backlight applications
Akinwande, A.I., Johnson, B.R., Holmen, J.O., Murphy, D., Arch, D.K.
Published in IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) (1995)
Published in IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012) (1995)
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Conference Proceeding
New mechanism of gate current in heterostructure insulated gate field-effect transistors
Jun Ho Baek, Shur, M., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.
Published in IEEE electron device letters (01.09.1986)
Published in IEEE electron device letters (01.09.1986)
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Journal Article
IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n+-GaAs charge-control layers
Arch, D.K., Abrokwah, J.K., Vold, P.J., Fraasch, A.M., Daniels, R.R., Cirillo, N.C., Shur, M.S., Xu, J.
Published in IEEE transactions on electron devices (01.11.1986)
Published in IEEE transactions on electron devices (01.11.1986)
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Journal Article
A self-aligned gate III-V heterostructure FET process for ultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits
Akinwande, A.I., Ruden, P.P., Vold, P.J., Han, C.-J., Grider, D.E., Narum, D.H., Nohava, T.E., Nohava, J.C., Arch, D.K.
Published in IEEE transactions on electron devices (01.10.1989)
Published in IEEE transactions on electron devices (01.10.1989)
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Journal Article