High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth
Rashidi, Arman, Rishinaramangalam, Ashwin K., Aragon, Andrew A., Mishkat-Ul-Masabih, Saadat, Monavarian, Morteza, Lee, Changmin, Denbaars, Steven P., Feezell, Daniel F.
Published in IEEE photonics technology letters (01.04.2020)
Published in IEEE photonics technology letters (01.04.2020)
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Journal Article
Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb
Rahimi, Nassim, Aragon, Andrew A., Romero, Orlando S., Shima, Darryl M., Rotter, Thomas J., Mukherjee, Sayan D., Balakrishnan, Ganesh, Lester, Luke F.
Published in APL materials (01.12.2013)
Published in APL materials (01.12.2013)
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Journal Article
Ultra-low resistance NiGeAu and PdGeAu ohmic contacts on N-GaSb grown on GaAs
Rahimi, Nassim, Aragon, Andrew A., Romero, Orlando S., Shima, Darryl M., Rotter, Tom J., Balakrishnan, Ganesh, Mukherjee, Sayan D., Lester, Luke F.
Published in 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) (01.06.2013)
Published in 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) (01.06.2013)
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Conference Proceeding
Nonpolar GaN-Based Superluminescent Diode with 2.5 GHz Modulation Bandwidth
Rishinaramangalam, Ashwin K., Rashidi, Arman, Masabih, Saadat Mishkat Ul, Aragon, Andrew A., Monavarian, Morteza, Lee, Changmin, DenBaars, Steven P., Feezell, Daniel F.
Published in 2018 IEEE International Semiconductor Laser Conference (ISLC) (01.09.2018)
Published in 2018 IEEE International Semiconductor Laser Conference (ISLC) (01.09.2018)
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Conference Proceeding
Explanation of low efficiency droop in semipolar \((20\bar 2\bar 1)\) InGaN/GaN LEDs through evaluation of carrier recombination coefficients
Monavarian, Morteza, Rashidi, Arman, Aragon, Andrew A, Oh, Sang H, Nami, Mohsen, DenBaars, Steve P, Feezell, Daniel F
Published in arXiv.org (09.06.2017)
Published in arXiv.org (09.06.2017)
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Journal Article